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CRG04(TE85L)

Description
RECTIFIER DIODE,600V V(RRM),UMD2VAR
CategoryDiscrete semiconductor    diode   
File Size171KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

CRG04(TE85L) Overview

RECTIFIER DIODE,600V V(RRM),UMD2VAR

CRG04(TE85L) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current15 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage600 V
surface mountYES
Base Number Matches1
CRG04
TOSHIBA Rectifier Silicon Diffused Type
CRG04
General-Purpose Rectifier Applications
Repetitive peak reverse voltage: V
RRM
= 600 V
Average forward current: I
F (AV)
= 1.0 A
Average forward voltage: V
FM
= 1.1V(Max)
2.6
±
0.1
3.5
±
0.2
Unit: mm
0.65
±
0.2
0.16
0.98
±
0.1
0 ~ 0.1
ANODE
CATHODE
Suitable for high-density board assembly due to the use of a small
surface-mount package, S−FLAT
TM
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive Peak Reverse Voltage
Average Forward Current
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
600
1.0(Note1)
15.0 (50Hz)
−40
to 150
−40
to 150
Unit
V
A
A
°C
°C
0.9
±
0.1
+ 0.2
1.6
0.1
Note 1: Ta=66°C
Device mounted on a ceramic board
board size: 50 mm
×
50 mm
soldering land: 2 mm
×2
mm
board thickness: 0.64 mm
Half-sine waveform:
α
=180°
JEDEC
JEITA
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM(1)
Peak forward voltage
V
FM(2)
V
FM(3)
Repetitive peak reverse current
I
RRM
Test Condition
I
FM
= 0.1 A (Pulse test)
I
FM
= 0.7 A (Pulse test)
I
FM
= 1.0 A (Pulse test)
V
RRM
= 600 V (Pulse test)
Device mounted on a ceramic board
Board size: 50 mm
×
50 mm
Soldering land: 2 mm
×
2 mm
Board thickness: 0.64 mm
Device mounted on a glass-epoxy board
Board size: 50 mm
×
50 mm
Soldering land: 6 mm
×
6 mm
Board thickness: 1.6 mm
Min
Typ.
0.84
0.95
0.98
Max
1.1
10
Unit
V
V
V
μA
65
°C/W
Thermal resistance
R
th (j-a)
130
R
th (j-ℓ)
20
°C/W
1
2008-02-01
0.65
±
0.2

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Description RECTIFIER DIODE,600V V(RRM),UMD2VAR DIODE GEN PURP 1A 600V S-FLAT
Is it Rohs certified? incompatible conform to
Reach Compliance Code unknown unknown
Is Samacsys N N
Base Number Matches 1 1
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