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MBR20060CTR

Description
100 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size115KB,2 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
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MBR20060CTR Overview

100 A, 30 V, SILICON, RECTIFIER DIODE

MBR20060CTR Parametric

Parameter NameAttribute value
MakerTransys Electronics Limited
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
Maximum non-repetitive peak forward current1500 A
Maximum operating temperature175 °C
Maximum output current100 A
Maximum repetitive peak reverse voltage60 V
technologySCHOTTKY
Transys
Electronics
L I M I T E D
MBR20020CT(A)
THRU
MBR200100CT(A)
SCHOTTKY DIODES MODULE TYPE 200A
Features
High Surge Capability
Types Up to 100V V
RRM
200Amp Rectifier
20-100 Volts
TWIN TOWER
A
R
Maximum Ratings
Operating Temperature: -40 C to +175
Storage Temperature: -40 C to +175
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
B
Maximum
RMS Voltage
14V
21V
25V
28V
32V
42V
56V
70V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Q
N
G
W
1
U
2
F
U
C
MBR20020CT(R)
MBR20030CT(R)
MBR20035CT(R)
MBR20040CT(R)
MBR20045CT(R)
MBR20060CT(R)
MBR20080CT(R)
MBR200100CT(R)
3
LUG
Teminal
Anode 1
LUG
Teminal
Anode 2
V
LUG
LUG
Teminal
Teminal
Cathode 1 Cathode 2
E
Electrical Characteristics @ 25
Average Forward
(Per pkg)
Current
Peak Forward Surge
(Per leg)
Current
Maximum
(Per leg)
Instantaneous
NOTE (1)
Forward Voltage
NOTE (1)
Maximum
Instantaneous
Reverse Current At
Rated DC Blocking
Voltage
(Per leg)
I
F(AV)
I
FSM
V
F
Unless Otherwise Specified
200A
1500A
0.65V
0.75V
0.84V
3
Baseplate
Common Cathode
3
Baseplate
R=Common Anode
T
C
=136
DIMENSIONS
INCHES
MIN
MAX
-----
¼
3.360
0.800
0.700
-----
0.650
0.120
0.130
0.510
0.490
1.379 BSC
-----
-----
- 20
1/4
0.275
0.290
3.150 BSC
-----
0.600
0.312
0.370
0.180
0.195
MM
MIN
MAX
-----
92.20
20.32
17.78
-----
16.51
3.3 0
3. 05
12.95
12.45
35.02
BSC
-----
-----
UN C
FULL
7.3 7
6.9 9
80.01
BSC
-----
15.24
9.40
7.92
4.95
4.57
8.3ms , half sine
(MBR20020CT~MBR20045CT)
(MBR20060CT)
(MBR20080CT~MBR200100CT)
I
FM
=100A;
T
j
= 25
I
R
5.0
m
A T
J
= 25
200
mA
T
J
=125
0.8
/W
Maximum Thermal
Resistance Junction
(Per leg)
To Case
R jc
DIM
A
B
C
E
F
G
H
N
Q
R
U
V
W
NOTE
2 PL
NOTE :
(1)
Pulse Test: Pulse Width 300 usec, Duty Cycle
<
2%
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