If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
Forward Current
Operating Temperature
Range (Note 3)
LM185-2.5
LM285-2.5
LM385-2.5
30 mA
10 mA
ESD Susceptibility (Note 9)
Storage Temperature
Soldering Information
TO-92 Package (10 sec.)
TO-46 Package (10 sec.)
SO and SOT Package
Vapor Phase (60 sec.)
Infrared (15 sec.)
2kV
−55°C to + 150°C
260°C
300°C
215°C
220°C
−55°C to + 125°C
−40°C to + 85°C
0°C to 70°C
See AN-450 “Surface Mounting Methods and Their Effect on
Product Reliability” for other methods of soldering surface
mount devices.
Electrical Characteristics
(Note 4)
LM385A-2.5
LM385AX-2.5
LM385AY-2.5
Tested
Limit
(Note 5)
2.480
2.520
2.500
Minimum Operating
Current
Reverse Breakdown
Voltage Change with
Current
Reverse Dynamic
Impedance
Wideband Noise (rms)
Long Term Stability
1 mA
≤
I
R
≤
20 mA
I
R
= 100 μA,
f = 20 Hz
I
R
= 100 μA
10 Hz
≤
f
≤
10 kHz
I
R
= 100 μA,
T = 1000 Hr,
T
A
= 25°C ±0.1°C
Average Temperature
Coefficient (Note 7)
I
MIN
≤
I
R
≤
20 mA
X Suffix
Y Suffix
All Others
30
50
150
ppm/°C
(Max)
20
ppm
120
0.2
10
20
0.6
1.5
μV
I
MIN
≤
I
R
≤
1mA
1
1.5
12
18
2.470
2.530
20
Design
Limit
(Note 6)
Parameter
Conditions
Typ
Units
(Limits)
Reverse Breakdown
Voltage
I
R
= 100 μA
2.500
V(Min)
V(Max)
V(Min)
V(Max)
μA
(Max)
mV
(Max)
mV
(Max)
Ω
3
www.national.com
LM185-2.5/LM285-2.5/LM385-2.5
Electrical Characteristics
LM185-2.5
LM185BX-2.5
LM185BY-2.5
LM285-2.5
LM285BX-2.5
LM285BY-2.5
Tested
Limit
(Notes 5, 8)
Reverse
Breakdown
Voltage
T
A
= 25°C,
20 μA
≤
I
R
≤
20 mA
13
2.5
2.462
2.538
20
1
10
1
30
1.5
20
Design
Limit
(Note 6)
LM385B-2.5
LM385BX-2.5
LM385BY-2.5
LM385-2.5
Units
(Limit)
Parameter
Conditions
Typ
Tested
Limit
(Note 5)
2.462
2.538
20
2.0
20
Design
Limit
(Note 6)
Tested Design
Limit
Limit
(Note 5) (Note 6)
2.425
2.575
V(Min)
V(Max)
30
20
2.5
25
μA
(Max)
mV
(Max)
mV
(Max)
Ω
μV
Minimum Operating
Current
LM385M3-2.5
Reverse
20 μA
≤
I
R
≤
1 mA
Breakdown Voltage
Change with
1 mA
≤
I
R
≤
20 mA
Current
Reverse Dynamic
Impedance
Wideband Noise
(rms)
I
R
= 100 μA,
f = 20 Hz
I
R
= 100 μA,
10 Hz
≤
f
≤
10 kHz
Long Term Stability I
R
= 100 μA,
T = 1000 Hr,
T
A
= 25°C ±0.1°C
Average
I
R
= 100 μA
Temperature
Coefficient (Note 7) X Suffix
Y Suffix
All Others
30
2.5
25
20
15
2.0
20
120
20
ppm
30
50
150
30
50
150
150
ppm/°C
ppm/°C
ppm/°C
(Max)
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
The guaranteed specifications apply only for the test conditions listed.
Note 2:
Refer to RETS185H-2.5 for military specifications.
Note 3:
For elevated temperature operation, T
J MAX
is:
LM185
LM285
LM385
150°C
125°C
100°C
Thermal Resistance
θ
ja
(Junction to Ambient)
θ
jc
(Junction to Case)
TO-92
180°C/W (0.4″ Leads)
170°C/W (0.125″ Leads)
N/A
80°C/W
N/A
N/A
TO-46
440°C/W
SO-8
165°C/W
SOT-23
283°C/W
Note 4:
Parameters identified with boldface type apply at temperature extremes. All other numbers apply at T
A
= T
J
= 25°C.
Note 5:
Guaranteed and 100% production tested.
Note 6:
Guaranteed, but not 100% production tested. These limits are not used to calculate average outgoing quality levels.
Note 7:
The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between the operating
T
MAX
and T
MIN
, divided by T
MAX
–T
MIN
. The measured temperatures are −55°C, −40°C, 0°C, 25°C, 70°C, 85°C, 125°C.
Note 8:
A military RETS electrical specification available on request.
Note 9:
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