Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
FEATURES
•
Low current (max. 50 mA)
•
High voltage (max. 300 V).
APPLICATIONS
•
Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package.
MARKING
TYPE NUMBER
BF820W
Notes
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
CM
P
tot
h
FE
C
re
f
T
PARAMETER
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
T
amb
≤
25
°C
I
C
= 25 mA; V
CE
= 20 V
I
C
= i
c
= 0; V
CB
= 30 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
open emitter
open base
CONDITIONS
−
−
−
−
50
−
60
MIN.
MARKING CODE
(1)
1V*
1
Top view
2
MAM062
BF820W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
Fig.1 Simplified outline (SOT323) and symbol.
MAX.
300
300
100
200
−
1.6
−
V
V
UNIT
mA
mW
pF
MHz
2003 Sep 09
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
BF820W
MAX.
300
300
5
50
100
50
200
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
625
UNIT
K/W
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 200 V
I
E
= 0; V
CB
= 200 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 25 mA; V
CE
= 20 V
I
C
= 30 mA; I
B
= 5 mA; note 1
I
C
= i
c
= 0; V
CB
= 30 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
−
−
−
50
−
−
60
MIN.
MAX.
10
10
50
−
600
1.6
−
mV
pF
MHz
UNIT
nA
µA
nA
2003 Sep 09
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
PACKAGE OUTLINE
BF820W
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
2003 Sep 09
4
Electronics Design Contest
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