EEWORLDEEWORLDEEWORLD

Part Number

Search

MT47H64M4BP-37E:B

Description
DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, 8 X 12 MM, ROHS COMPLIANT, FBGA-60
Categorystorage    storage   
File Size9MB,133 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric Compare View All

MT47H64M4BP-37E:B Overview

DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, 8 X 12 MM, ROHS COMPLIANT, FBGA-60

MT47H64M4BP-37E:B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X11,32
Contacts60
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)266 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee1
length12 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals60
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize64MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.005 A
Maximum slew rate0.24 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm
Base Number Matches1
256Mb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H64M4 – 16 Meg x 4 x 4 banks
MT47H32M8 – 8 Meg x 8 x 4 banks
MT47H16M16 – 4 Meg x 16 x 4 banks
Features
Vdd = +1.8V ±0.1V, VddQ = +1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8,192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
Automotive temperature (AT) option
RoHS compliant
Supports JEDEC clock jitter specification
Options
1
Configuration
64 Meg x 4 (16 Meg x 4 x 4 banks)
32 Meg x 8 (8 Meg x 8 x 4 banks)
16 Meg x 16 (4 Meg x 16 x 4 banks)
FBGA package (Pb-free)
60-ball FBGA (8mm x 12mm) x4, x8
84-ball FBGA (8mm x 14mm) x16
FBGA package (lead solder)
60-ball FBGA (8mm x 12mm) x4, x8
84-ball FBGA (8mm x 14mm) x16
Timing – cycle time
3.0ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)
5.0ns @ CL = 3 (DDR2-400)
Self refresh
Standard
Low-power
Operating temperature
Commercial (0°C
T
C
85°C)
Industrial (–40°C
T
C
95°C;
–40°C
T
A
85°C)
Automotive (–40°C
T
C
, T
A
105°C)
Revision
Note:
Marking
64M4
32M8
16M16
BP
BG
FP
FG
-3
-37E
-5E
None
L
None
IT
AT
:B
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on
www.micron.com
for
product offerings and availability.
Table 1: Key Timing Parameters
Speed Grade
-3
-37E
-5E
Data Rate (MT/s)
CL = 3
400
400
400
CL = 4
533
533
400
CL = 5
667
n/a
n/a
t
RC
(ns)
55
55
55
PDF: 09005aef8117c187
Rev. L 09/08 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2003 Micron Technology, Inc. All rights reserved.

MT47H64M4BP-37E:B Related Products

MT47H64M4BP-37E:B MT47H32M8BP-3:B MT47H32M8BP-37E:B MT47H16M16BG-37E:B MT47H16M16BG-3:B
Description DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, 8 X 12 MM, ROHS COMPLIANT, FBGA-60 DDR DRAM, 32MX8, 0.45ns, CMOS, PBGA60, 8 X 12 MM, ROHS COMPLIANT, FBGA-60 DDR DRAM, 32MX8, 0.5ns, CMOS, PBGA60, 8 X 12 MM, ROHS COMPLIANT, FBGA-60 DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84
Is it Rohs certified? conform to conform to conform to conform to conform to
Parts packaging code BGA BGA BGA BGA BGA
package instruction TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32
Contacts 60 60 60 84 84
Reach Compliance Code unknown unknown not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 0.5 ns 0.45 ns 0.5 ns 0.5 ns 0.45 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 266 MHz 333 MHz 266 MHz 266 MHz 333 MHz
I/O type COMMON COMMON COMMON COMMON COMMON
interleaved burst length 4,8 4,8 4,8 4,8 4,8
JESD-30 code R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B84 R-PBGA-B84
JESD-609 code e1 e1 e1 e1 e1
length 12 mm 12 mm 12 mm 14 mm 14 mm
memory density 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 4 8 8 16 16
Number of functions 1 1 1 1 1
Number of ports 1 1 1 1 1
Number of terminals 60 60 60 84 84
word count 67108864 words 33554432 words 33554432 words 16777216 words 16777216 words
character code 64000000 32000000 32000000 16000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C
organize 64MX4 32MX8 32MX8 16MX16 16MX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA TFBGA TFBGA TFBGA
Encapsulate equivalent code BGA60,9X11,32 BGA60,9X11,32 BGA60,9X11,32 BGA84,9X15,32 BGA84,9X15,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 260 260 260 260 260
power supply 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192 8192
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES YES YES
Continuous burst length 4,8 4,8 4,8 4,8 4,8
Maximum standby current 0.005 A 0.005 A 0.005 A 0.005 A 0.005 A
Maximum slew rate 0.24 mA 0.26 mA 0.24 mA 0.17 mA 0.18 mA
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
surface mount YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER OTHER OTHER
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 30 30 30
width 8 mm 8 mm 8 mm 8 mm 8 mm
Maker - - Micron Technology Micron Technology Micron Technology
Conversion and application of broadcasting technology in video surveillance system
As IP high-definition monitoring gradually becomes the development trend of security, more and more monitoring equipment and management systems have more intersections with the radio and television fi...
xyh_521 Industrial Control Electronics
Automotive CAN Network Test Development Methodology
1. Introduction With the development of automotive electronic technology and the improvement of automotive performance requirements, the number of electronic control units (ECU, Electronic Control Uni...
hxqhit Automotive Electronics
Has anyone used dsp28335 to make an FIR filter? I got the effect but the frequency can't go up. The frequency is greater than 2k waveform...
Please give me some advice, my maximum low pass is about 2k, which can be achieved perfectly, but the waveform becomes ugly when the frequency is high...
风华 DSP and ARM Processors
Ask about wireless network card
There is a project now, which realizes the use of wireless network card to access the Internet under wince system. Currently, most of the network cards on the market have USB interfaces, and there are...
minghao34 Embedded System
MSP430 Learning
TA of 430F2xxx is a 16-bit timer/counter with 3 "capture/compare registers". The timer (TA) and "capture/compare register" (CCRx) work relatively independently.Counter TAR has three modes (increment c...
jdk1024 Microcontroller MCU
Ask: vxworks end driver buffer full problem.
LOCAL void motFecReceive ( DRV_CTRL * pDrvCtrl, /* pointer to DRV_CTRL structure */ MOT_FEC_RBD_ID pUsedRbd /* pointer to a RBD */ ) { . . . . . . . . . . . . . . . . . . /* Allocate an MBLK, and a re...
ytwolf007 Real-time operating system RTOS

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 22  917  751  2108  2869  1  19  16  43  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号