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MAZ2300

Description
Silicon planar type
CategoryDiscrete semiconductor    diode   
File Size127KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

MAZ2300 Overview

Silicon planar type

MAZ2300 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeDO-41
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance25 Ω
JEDEC-95 codeDO-41
JESD-30 codeO-LALF-W2
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Nominal reference voltage30 V
surface mountNO
technologyZENER
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance6.67%
Working test current10 mA
This product complies with the RoHS Directive (EU 2002/95/EC).
Zener Diodes
MAZ2xxx Series
(MA2xxx Series)
Silicon planar type
Unit: mm
For stabilization of power supply
Features
High reliability, achieved by the combination the planar type
and the glass seal
Large power dissipation P
D
Wide voltage range: Zener voltage V
Z
=
5.1 V to 56.0 V
2.6
–0.2
+0.4
Cathode
1st Band
2nd Band
3rd Band
Anode
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Repetitive peak forward current
Power dissipation
*1
Symbol
I
FRM
P
D
P
ZSM
T
j
T
stg
Rating
400
1.0
75
200
−55
to
+200
Unit
mA
W
W
°C
°C
DO-41-A1 Package
Non-repetitive reverse surge
power dissipation
*2
Junction temperature
Storage temperature
Note) *1: P
D
=
1.0 W achieved with a printed circuit board
*2: t
=
100
µs,
T
j
=
150°C
Common Electrical Characteristics
T
a
=
25°C
±
3°C
*1
Parameter
Forward voltage
Zener voltage
*2
Zener operating resistance
Reverse current
Temperature coefficient of zener voltage
Terminal capacitance
*3
Symbol
V
F
V
Z
R
Z
I
R
S
Z
C
t
Conditions
I
F
=
200 mA
I
Z
I
Z
V
R
I
Z
Specified value
Specified value
Specified value
Specified value
Min
Typ
Max
1.0
φ
0.8
±00.5
27 min.
Colored band
indicatesVz
classification
4.0
±0.5
27 min.
Unit
V
V
µA
mV/°C
pF
Refer to the list of the
electrical characteristics
within part numbers
V
R
=
0 V, f
=
1 MHz
Specified value
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
*2: V
Z
guaranteed 20 ms after current flow.
*3: T
j
=
25°C to 150°C
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SKE00002CED
1

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