Power Transistors
2SD1263, 2SD1263A
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
s
Features
q
q
7.5±0.2
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1263
2SD1263A
2SD1263
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25˚C)
Ratings
350
400
250
300
5
1.5
0.75
35
2
150
–55 to +150
Unit
V
16.7±0.3
φ3.1±0.1
4.2±0.2
1.4±0.1
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
High collector to base voltage V
CBO
Full-pack package which can be installed to the heat sink with
one screw
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
14.0±0.5
emitter voltage 2SD1263A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
A
A
W
˚C
˚C
Solder Dip
4.0
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD1263
2SD1263A
2SD1263
2SD1263A
2SD1263
2SD1263A
(T
C
=25˚C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 350V, V
BE
= 0
V
CE
= 400V, V
BE
= 0
V
CE
= 150V, I
B
= 0
V
CE
= 200V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 10V, I
C
= 0.3A
V
CE
= 10V, I
C
= 1A
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
30
0.5
2
0.5
250
300
70
10
1.5
1
V
V
MHz
µs
µs
µs
250
min
typ
max
1
1
1
1
1
Unit
mA
mA
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
1
Power Transistors
P
C
— Ta
50
1.2
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
1.0
2SD1263, 2SD1263A
I
C
— V
CE
4.0
V
CE
=10V
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
(1)
30
0.8
I
B
=14mA
12mA
10mA
8mA
6mA
Collector current I
C
(A)
40
3.2
25˚C
T
C
=100˚C
–25˚C
2.4
0.6
20
1.6
0.4
4mA
10
(2)
(3)
(4)
0.2
2mA
0.8
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10000
10
I
C
/I
B
=10
h
FE
— I
C
1000
V
CE
=10V
300
100
30
10
3
1
0.3
0.1
0.001 0.003
f
T
— I
C
V
CE
=10V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
T
C
=100˚C
3
1000
300
100
30
10
3
1
0.01 0.03
1
T
C
=100˚C
25˚C
–25˚C
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01
0.03
0.1
0.3
1
3
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
3000
0.01 0.03
0.1
0.3
1
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
10
3
10
3
Non repetitive pulse
T
C
=25˚C
I
CP
t=1ms
I
C
0.3
0.1
0.03
0.01
0.003
0.001
1
3
10
30
100
10ms
DC
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
2
1
10
(2)
1
2SD1263A
2SD1263
10
–1
300
1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
MCU
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