2SD1263A datasheet, PDF - EEWORLD Datasheet

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2SD1263A: DescriptionSilicon NPN triple diffusion planar type(For power amplification); CategoryDiscrete semiconductor The transistor; File Size31KB，2 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SD1263A Overview

Silicon NPN triple diffusion planar type(For power amplification)

2SD1263A Parametric

Parameter Name	Attribute value
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	0.75 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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Power Transistors

2SD1263, 2SD1263A

Silicon NPN triple diffusion planar type

For power amplification

Unit: mm

Features

7.5±0.2

Absolute Maximum Ratings

Parameter

Collector to

base voltage

Collector to

2SD1263

2SD1263A

2SD1263

Symbol

CBO

CEO

EBO

stg

=25˚C)

Ratings

350

400

250

300

1.5

0.75

150

–55 to +150

Unit

16.7±0.3

φ3.1±0.1

4.2±0.2

1.4±0.1

1.3±0.2

0.5

+0.2

–0.1

0.8±0.1

2.54±0.25

5.08±0.5

High collector to base voltage V

CBO

Full-pack package which can be installed to the heat sink with

one screw

0.7±0.1

10.0±0.2

5.5±0.2

2.7±0.2

4.2±0.2

14.0±0.5

emitter voltage 2SD1263A

Emitter to base voltage

Peak collector current

Collector current

Collector power T

=25°C

dissipation

Ta=25°C

Junction temperature

Storage temperature

˚C

Solder Dip

4.0

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics

Parameter

Collector cutoff

current

Collector cutoff

current

Emitter cutoff current

Collector to emitter

voltage

2SD1263

2SD1263A

2SD1263

2SD1263A

2SD1263

2SD1263A

=25˚C)

Symbol

CES

CEO

EBO

CEO

FE1*

FE2

CE(sat)

stg

Conditions

= 350V, V

= 0

= 400V, V

= 0

= 150V, I

= 0

= 200V, I

= 0

= 5V, I

= 0

= 30mA, I

= 0

= 10V, I

= 0.3A

= 10V, I

= 1A

= 10V, I

= 1A

= 1A, I

= 0.2A

= 5V, I

= 0.5A, f = 10MHz

= 1A, I

= 0.1A, I

= – 0.1A,

= 50V

0.5

250

300

1.5

MHz

µs

250

min

typ

max

Unit

Forward current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

FE1

Rank classification

70 to 150

120 to 250

Rank

FE1

2SD1263A Related Products

	2SD1263A	2SD1263
Description	Silicon NPN triple diffusion planar type(For power amplification)	Silicon NPN triple diffusion planar type(For power amplification)
Parts packaging code	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	0.75 A	0.75 A
Collector-emitter maximum voltage	300 V	250 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	2 W	2 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz
Base Number Matches	1	1

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