RN2505(TE85R) datasheet, PDF - EEWORLD Datasheet

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RN2505(TE85R): DescriptionTRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size467KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2505(TE85R) Overview

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal

RN2505(TE85R) Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G5
Contacts	5
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 0.0468
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G5
Number of components	2
Number of terminals	5
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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RN2501~RN2506

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2501,RN2502,RN2503

RN2504,RN2505,RN2506

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Including two devices in SMV (super mini type with 5 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1501 to RN1506

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2501

RN2502

RN2503

RN2504

RN2505

RN2506

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

SMV

JEDEC

―

JEITA

―

TOSHIBA

2-3L1A

Weight: 14 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2501 to 2506

RN2501 to 2504

RN2505, 2506

Symbol

CBO

CEO

EBO

Tstg

Rating

−50

−10

−5

−100

300

150

−55

to150

Unit

°C

Equivalent Circuit

(Top View)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating

2010-05-20

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