RU101T146 datasheet, PDF - EEWORLD Datasheet

RU101T146: DescriptionSmall Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size28KB，1 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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RU101T146 Overview

Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.05 A
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	150
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

	RU101T146	RU101T147
Description	Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.05 A	0.05 A
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	150	150
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz
VCEsat-Max	0.3 V	0.3 V
Base Number Matches	1	1

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