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RN1966CT(TE85L)

Description
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
CategoryDiscrete semiconductor    The transistor   
File Size191KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN1966CT(TE85L) Overview

PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC

RN1966CT(TE85L) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.05 A
Minimum DC current gain (hFE)120
Number of components2
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.05 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
RN1961CT~RN1966CT
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1961CT,RN1962CT,RN1963CT
RN1964CT,RN1965CT,RN1966CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
0.9±0.05
Unit: mm
1.0±0.05
0.15±0.03
0.2±0.03
0.6±0.02
Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
0.2±0.03
0.35±0.02
0.35±0.02
0.075±0.03
0.7±0.03
Complementary to RN2961CT to RN2966CT
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1961CT
RN1962CT
R2
RN1963CT
RN1964CT
E
RN1965CT
RN1966CT
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
CST6
JEDEC
JEITA
TOSHIBA
(E1)
1.EMITTER1
(E2)
2.EMITTER2
(B2)
3.BASE2
4.COLLECTOR2 (C2)
(B1)
5.BASE1
6.COLLECTOR1 (C1)
B
R1
2-1K1A
Weight: 1 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1961CT
to 1966CT
RN1961CT
to 1964CT
Emitter-base voltage
RN1965CT,
1966CT
Symbol
V
CBO
V
CEO
Rating
20
20
10
V
EBO
5
I
C
RN1961CT
to
RN1966CT
P
C
(Note1)
T
j
T
stg
50
50
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Equivalent Circuit
(top view)
6
Q1
5
4
Q2
1
2
3
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Total rating
1
2009-04-14
0.38 +0.02
-0.03
0.05±0.03

RN1966CT(TE85L) Related Products

RN1966CT(TE85L) RN1961CT(TE85L) RN1964CT(TE85L) RN1963CT(TE85L)
Description PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC PRE-BIASED \"DIGITAL\" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC PRE-BIASED \"DIGITAL\" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A
Minimum DC current gain (hFE) 120 30 120 100
Number of components 2 2 2 2
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.05 W 0.05 W 0.05 W 0.05 W
surface mount YES YES YES YES
Transistor component materials SILICON SILICON SILICON SILICON
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