RN1963CT(TE85L) datasheet, PDF

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RN1963CT(TE85L): DescriptionPRE-BIASED \"DIGITAL\" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC; CategoryDiscrete semiconductor The transistor; File Size191KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN1963CT(TE85L) Overview

PRE-BIASED \"DIGITAL\" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC

RN1963CT(TE85L) Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.05 A
Minimum DC current gain (hFE)	100
Number of components	2
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.05 W
surface mount	YES
Transistor component materials	SILICON

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RN1961CT~RN1966CT

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1961CT,RN1962CT,RN1963CT

RN1964CT,RN1965CT,RN1966CT

Switching Applications

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

0.9±0.05

Unit: mm

1.0±0.05

0.15±0.03

0.2±0.03

６

５

４

0.6±0.02

•

Two devices are incorporated into a fine pitch Small Mold (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

１

0.2±0.03

２

３

0.35±0.02

0.075±0.03

0.7±0.03

•

Complementary to RN2961CT to RN2966CT

Equivalent Circuit and Bias Resistor Values

Type No.

RN1961CT

RN1962CT

RN1963CT

RN1964CT

RN1965CT

RN1966CT

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

CST6

JEDEC

JEITA

TOSHIBA

(E1)

1.EMITTER1

(E2)

2.EMITTER2

(B2)

3.BASE2

4.COLLECTOR2 (C2)

(B1)

5.BASE1

6.COLLECTOR１ (C1)

―

2-1K1A

Weight: 1 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

(Q1, Q2 common)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN1961CT

to 1966CT

RN1961CT

to 1964CT

Emitter-base voltage

RN1965CT,

1966CT

Symbol

CBO

CEO

Rating

EBO

RN1961CT

RN1966CT

(Note1)

stg

150

−55

to 150

°C

Unit

Equivalent Circuit

(top view)

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1: Total rating

2009-04-14

0.38 +0.02

-0.03

0.05±0.03

RN1963CT(TE85L) Related Products

	RN1963CT(TE85L)	RN1966CT(TE85L)	RN1961CT(TE85L)	RN1964CT(TE85L)
Description	PRE-BIASED \"DIGITAL\" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC	PRE-BIASED \"DIGITAL\" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A	0.05 A
Minimum DC current gain (hFE)	100	120	30	120
Number of components	2	2	2	2
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.05 W	0.05 W	0.05 W	0.05 W
surface mount	YES	YES	YES	YES
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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