RN2321A∼RN2327A
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2321A,RN2322A,RN2323A,RN2324A
RN2325A,RN2326A,RN2327A
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
High current driving is possible.
Since bias resisters are built in the transistor, the miniaturization of the
apparatus by curtailment of the number of parts and laborsaving of an
assembly are possible.
Many kinds of resistance value are lined up in order to support various
kinds of circuit design.
Complementary to RN1321A~RN1327A
Low V
CE(sat)
enable to be low power dissipation on high current driving.
Equivalent Circuit And Bias Resistance Values
Type No.
RN2321A
RN2322A
RN2323A
RN2324A
RN2325A
RN2326A
RN2327A
R1 (kΩ)
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
JEITA
TOSHIBA
―
SC-70SCSC
2-2E1A
Weight: 0.006 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2321A~2327A
RN2321A~2324A
Emitter-base voltage
RN2325A, 2326A
RN2327A
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2321A~2327A
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−15
−12
−10
−5
−6
−500
100
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
RN2321A∼RN2327A
RN2321A
-1000
COLLECTOR CURRENT IC (mA)
Ta=100°C
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2321A IC - VI(OFF)
-100
-1000
Ta=100°C
25
-
25
25
-10
-
25
-1
COMMON EMITTER
VCE=- 0.2V
-0.1
-0.1
-1
-10
INPUT VOLTAGE VI(ON) (V)
-100
-100
COMMON
EMITTER
VCE=- 5V
-0
-0.5
-1
-1.5
INPUT VOLTAGE VI(OFF) (V)
-2
-10
RN2321A
1000
DC CURRENT GAIN hFE
hFE - IC
SATURATION VOLTAGE VCE(sat) (V)
-1
RN2321A
VCE(sat) - IC
COMMON EMITTER
IC/IB=25
100
Ta=100°C
25
-
25
Ta=100°C
-0.1
25
-25
10
COMMON EMITTER
VCE=- 1V
1
-1
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
-0.01
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
3
2007-11-01
RN2321A∼RN2327A
RN2322A
-1000
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2322A IC - VI(OFF)
-100
Ta=100°C
25
-1000
Ta=100°C
25
-
25
-10
-
25
-1
COMMON EMITTER
VCE=- 0.2V
-1
-10
INPUT VOLTAGE VI(ON) (V)
-100
-100
COMMON
EMITTER
VCE=- 5V
-10
-0
-0.5
-1
-1.5
INPUT CURRENT VI(OFF) (V)
-2
-0.1
-0.1
RN2322A
1000
hFE - IC
-1
COLLCTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
RN2322A
VCE(sat) - IC
DC CURRENT GAIN hFE
COMMON EMITTER
VCE=- 1V
100
Ta=100°C
25
-
25
10
COMMON EMITTER
IC/IB=50
Ta=100°C
-0.1
25
-
25
1
-1
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
-0.01
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
4
2007-11-01
RN2321A∼RN2327A
RN2323A
-1000
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2323A IC - VI(OFF)
COMMON
EMITTER
VCE=- 5V
-1000
Ta=100°C
25
-
25
-100
Ta=100°C
-10
25
-
25
-1
COMMON EMITTER
VCE=- 0.2V
-0.1
-0.1
-1
-10
INPUT VOLTAGE VI(ON) (V)
-100
-100
-10
-0
-0.5
-1
-1.5
INPUT VOLTAGE VI(OFF) (V)
-2
RN2323A
1000
hFE - IC
-1
COLLCTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
RN2323A
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
100
-
25
10
COMMON EMITTER
VCE=- 1V
1
-1
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
IC/IB=50
Ta=100°C
-0.1
25
-
25
25
-0.01
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
5
2007-11-01
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