Transistor
2SD1280
Silicon NPN epitaxial planer type
For low-voltage type medium output power amplification
Unit: mm
s
q
q
Features
Low collector to emitter saturation voltage V
CE(sat)
.
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
(Ta=25˚C)
Ratings
20
20
5
2
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
2.6±0.1
4.5±0.1
1.6±0.2
1.5±0.1
0.4max.
45°
q
1.0
–0.2
+0.1
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
4.0
–0.20
0.4±0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
marking
EIAJ:SC–62
Mini Power Type Package
Marking symbol :
R
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
(Ta=25˚C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
BE(sat)
V
CE(sat)
f
T
C
ob
*1
Conditions
V
CB
= 10V, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 2V, I
C
=
500mA
*2
V
CE
= 2V, I
C
= 1.5A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 1A, I
B
= 50mA
*2
V
CB
= 6V, I
E
= –50mA, f = 200MHz
V
CB
= 6V, I
E
= 0, f = 1MHz
min
typ
max
1
Unit
µA
V
V
20
5
90
50
150
100
1.2
0.5
150
18
*2
360
MHz
pF
Pulse measurement
FE1
Rank classification
Rank
h
FE1
Q
90 ~ 155
RQ
R
130 ~ 210
RR
S
180 ~ 280
RS
T
250 ~ 360
RT
Marking Symbol
2.5±0.1
+0.25
V
V
1
Transistor
P
C
— Ta
1.2
1.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
1.0
1.0
I
B
=5.0mA
4.5mA
4.0mA
0.6
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
0
0
20
40
60
80 100 120 140 160
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.1
0.2
I
C
/I
B
=10
20
2SD1280
I
C
— V
CE
1.2
Ta=25˚C
I
C
— V
CE(sat)
Collector power dissipation P
C
(W)
1.0
Collector current I
C
(A)
0.8
0.8
Collector current I
C
(A)
0.8
0.6
0.6
0.4
0.4
0.4
0.2
0.2
0.2
0.3
0.4
0.5
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
— I
B
Collector to emitter saturation voltage V
CE(sat)
(V)
1.2
V
CE
=2V
Ta=25˚C
1.0
100
30
10
3
1
V
CE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=20
100
30
10
3
V
BE(sat)
— I
C
I
C
/I
B
=10
Collector current I
C
(A)
0.8
25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
75˚C
0.6
Ta=75˚C
0.3
0.1
0.03
0.01
0.01 0.03
25˚C
–25˚C
0.4
0.2
0
0
2
4
6
8
10
12
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Base current I
B
(mA)
Collector current I
C
(A)
Collector current I
C
(A)
h
FE
— I
C
600
V
CE
=2V
200
175
150
125
100
75
50
25
0
0.01 0.03
0
–1
f
T
— I
E
50
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CB
=6V
Ta=25˚C
I
E
=0
f=1MHz
Ta=25˚C
40
Forward current transfer ratio h
FE
500
400
Transition frequency f
T
(MHz)
30
300
Ta=75˚C
25˚C
–25˚C
20
200
100
10
0
–3
–10
–30
–100
1
3
10
30
100
0.1
0.3
1
3
10
Collector current I
C
(A)
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
2
Transistor
I
CBO
— Ta
10
4
V
CB
=10V
10
5
2SD1280
I
CEO
— Ta
V
CE
=18V
Area of safe operation (ASO)
10
3 I
CP
Single pulse
Ta=25˚C
t=10ms
t=1s
0.3
0.1
0.03
0.01
0.003
DC
10
3
Collector current I
C
(A)
0
20
40
60
80 100 120 140 160
10
4
1
I
C
I
CBO
(Ta)
I
CBO
(Ta=25˚C)
I
CEO
(Ta)
I
CEO
(Ta=25˚C)
10
3
10
2
10
2
10
10
1
0
20
40
60
80 100 120 140 160
1
0.001
0.1
0.3
1
3
10
30
100
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
3
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