2SD1302 datasheet, PDF - EEWORLD Datasheet

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2SD1302: DescriptionSilicon NPN epitaxial planer type(For low-voltage output amplification); CategoryDiscrete semiconductor The transistor; File Size32KB，2 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SD1302 Overview

Silicon NPN epitaxial planer type(For low-voltage output amplification)

2SD1302 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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Transistor

2SD1302

Silicon NPN epitaxial planer type

For low-voltage output amplification

For muting

For DC-DC converter

Unit: mm

5.0±0.2

4.0±0.2

s

Features

q

s

Absolute Maximum Ratings

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

(Ta=25˚C)

Ratings

25

20

12

1

0.5

600

150

–55 ~ +150

Unit

V

2.3±0.2

0.45

–0.1

1.27

+0.2

13.5±0.5

Low collector to emitter saturation voltage V

CE(sat)

.

Low ON resistance R

on

.

High foward current transfer ratio h

FE

.

5.1±0.2

0.45

–0.1

1.27

+0.2

V

A

mW

˚C

1 2 3

2.54±0.15

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

s

Electrical Characteristics

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

ON resistanse

(Ta=25˚C)

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1*1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

R

on*3

Conditions

V

CB

= 25V, I

E

= 0

I

C

= 10µA, I

E

= 0

I

C

= 1mA, I

B

= 0

I

E

= 10µA, I

C

= 0

V

CE

= 2V, I

C

= 0.5A

*2

V

CE

= 2V, I

C

= 1A

*2

I

C

= 0.5A, I

B

= 20mA

I

C

= 0.5A, I

B

= 50mA

V

CB

= 10V, I

E

= –50mA, f = 200MHz

V

CB

= 10V, I

E

= 0, f = 1MHz

200

10

1.0

*2

min

typ

max

100

Unit

nA

V

25

20

12

200

60

0.13

0.4

1.2

800

V

MHz

pF

Ω

Pulse measurement

*1

h

FE1

Rank classification

R

200 ~ 350

S

300 ~ 500

T

400 ~ 800

*3

R

on

Measurement circuit

1kΩ

Rank

h

FE1

I

B

=1mA

f=1kHz

V=0.3V

V

B

V

A

R

on

=

V

B

!1000(Ω)

V

A

–V

B

1

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