INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
BD375/377/379
DESCRIPTION
·DC
Current Gain-
: h
FE
= 20(Min)@ I
C
= 1A
·Complement
to Type BD376/378/380
APPLICATIONS
·Designed
for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD375
V
CBO
Collector-Base Voltage
BD377
BD379
BD375
V
CEO
Collector-Emitter Voltage
BD377
BD379
V
EBO
I
C
I
CM
I
B
B
VALUE
50
75
100
45
60
80
5
2
3
1
25
150
-55~150
UNIT
V
V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
V
A
A
A
W
℃
℃
P
C
T
J
T
stg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD375
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
BD377
BD379
BD375
V
CBO
Collector-Base Voltage
BD377
BD379
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
BD375
I
CBO
Collector Cutoff Current
BD377
BD379
I
EBO
h
FE-1
h
FE-2
Emitter Cutoff Current
DC Current Gain
DC Current Gain
I
C
= 1A; I
B
= 0.1A
B
BD375/377/379
CONDITIONS
MIN
45
TYP.
MAX
UNIT
I
C
= 100mA ; I
B
= 0
60
80
50
V
I
C
= 0.1mA ; I
E
= 0
75
100
1.0
1.5
2
2
2
0.1
40
20
375
V
V
V
I
C
= 1A; V
CE
= 2V
V
CB
= 45V; I
E
= 0
V
CB
= 60V; I
E
= 0
V
CB
= 80V; I
E
= 0
V
EB
= 5V; I
C
= 0
I
C
= 0.15A ; V
CE
= 2V
I
C
= 1A; V
CE
= 2V
μA
mA
Switching Times
t
on
t
off
Turn-On Time
Turn-Off Time
0.05
0.5
μs
μs
I
C
= 0.5A; I
B1
= -I
B2
= 50mA;
V
CC
= 30V
h
FE-1
Classifications
6
40-100
10
63-160
16
100-250
25
150-375
isc Website：www.iscsemi.cn
2
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