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BD379-10

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size112KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

BD379-10 Overview

Transistor

BD379-10 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Maximum collector current (IC)2 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)63
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)25 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max1 V
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
BD375/377/379
DESCRIPTION
·DC
Current Gain-
: h
FE
= 20(Min)@ I
C
= 1A
·Complement
to Type BD376/378/380
APPLICATIONS
·Designed
for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD375
V
CBO
Collector-Base Voltage
BD377
BD379
BD375
V
CEO
Collector-Emitter Voltage
BD377
BD379
V
EBO
I
C
I
CM
I
B
B
VALUE
50
75
100
45
60
80
5
2
3
1
25
150
-55~150
UNIT
V
V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
V
A
A
A
W
P
C
T
J
T
stg
isc Website:www.iscsemi.cn

BD379-10 Related Products

BD379-10 BD377-25 BD379-16 BD377-16
Description Transistor Transistor Transistor Transistor
package instruction FLANGE MOUNT, R-PSFM-T3 , FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown unknown unknown
Maker Inchange Semiconductor - Inchange Semiconductor Inchange Semiconductor
Maximum collector current (IC) 2 A - 2 A 2 A
Collector-emitter maximum voltage 80 V - 80 V 60 V
Configuration SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 63 - 100 100
JEDEC-95 code TO-126 - TO-126 TO-126
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN - NPN NPN
Maximum power dissipation(Abs) 25 W - 25 W 25 W
surface mount NO - NO NO
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
VCEsat-Max 1 V - 1 V 1 V
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