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2SD1314

Description
NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
CategoryDiscrete semiconductor    The transistor   
File Size187KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SD1314 Overview

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

2SD1314 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage450 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment150 W
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)12300 ns
Maximum opening time (tons)1000 ns
VCEsat-Max2 V
Base Number Matches1
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