Power Transistors
2SB968
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency output amplification
Complementary to 2SD1295
6.5±0.1
5.3±0.1
4.35±0.1
2.3±0.1
0.5±0.1
0.8max
q
q
q
Possible to solder the radiation fin directly to printed cicuit board
High collector to emitter V
CEO
Large collector power dissipation P
C
2.5±0.1
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
0.75±0.1
2.3±0.1
4.6±0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25°C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1
2
3
(Ta=25˚C)
Ratings
–50
–40
–5
–3
–1.5
20
150
–55 to +150
Unit
V
V
V
A
A
W
0.6
2.3
2.3
0.75
6.5±0.2
5.35
4.35
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
˚C
˚C
1
2
3
2.3±0.1
0.5±0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(T
C
=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CE
= –5V, I
C
= –1A
I
C
= –1.5A, I
B
= – 0.15A
I
C
= –2A, I
B
= – 0.2A
V
CB
= –5V, I
E
= 0.5A, f = 200MHz
V
CB
= –20V, I
E
= 0, f = 1MHz
150
45
–50
–40
50
220
–1
–1.5
V
V
MHz
pF
min
typ
max
–1
–100
–10
Unit
µA
µA
µA
V
V
*
h
FE
Rank classification
P
50 to 100
Q
80 to 160
R
120 to 220
Rank
h
FE
6.0
5.5±0.2
13.3±0.3
1.8
1.0±0.2
s
Features
7.3±0.1
1.8±0.1
1
Power Transistors
P
C
— Ta
32
–4.0
T
C
=Ta
28
–3.5
2SB968
I
C
— V
CE
T
C
=25˚C
I
B
=–40mA
–35mA
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
I
C
/I
B
=10
Collector power dissipation P
C
(W)
Collector current I
C
(A)
24
20
16
12
8
4
0
0
20
40
60
80 100 120 140 160
–3.0
–2.5
–30mA
–25mA
–20mA
–3
–1
–2.0
–15mA
–1.5
–1.0
–5mA
–10mA
– 0.3
T
C
=100˚C
25˚C
–25˚C
– 0.1
– 0.5
0
0
–2
–4
–6
–8
–10
– 0.03
– 0.01
– 0.01 – 0.03
– 0.1
– 0.3
–1
–3
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
–10
I
C
/I
B
=10
1000
h
FE
— I
C
240
V
CE
=–5V
f
T
— I
E
V
CB
=–5V
f=200MHz
T
C
=25˚C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
–3
200
–3
T
C
=–25˚C
100˚C
25˚C
300
T
C
=100˚C
25˚C
160
–1
100
–25˚C
120
– 0.3
30
– 0.1
10
80
– 0.03
3
40
– 0.01
– 0.01 – 0.03
– 0.1
– 0.3
–1
–3
1
– 0.01 – 0.03
– 0.1
– 0.3
–1
0
10
30
100
300
1000 3000 10000
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
150
–120
V
CER
— R
BE
1000
T
C
=25˚C
300
I
CEO
— Ta
V
CE
=–12V
Collector output capacitance C
ob
(pF)
120
Collector to emitter voltage V
CER
(V)
I
E
=0
f=1MHz
T
C
=25˚C
–100
–80
I
CEO
(Ta)
I
CEO
(Ta=25˚C)
0.01
0.1
1
10
100
90
–60
30
60
–40
10
30
–20
3
0
–1
–3
–10
–30
–100
0
0.001
1
0
20
40
60
80
100
120
Collector to base voltage V
CB
(V)
Base to emitter resistance R
BE
(kΩ)
Ambient temperature Ta (˚C)
2
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