2SD1376(K)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1012(K)
Outline
TO-126 MOD
2
3
1. Emitter
2. Collector
3. Base
I
D
6 kΩ
(Typ)
0.5 kΩ
(Typ)
1
1
2
3
2SD1376(K)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C (peak)
P
C
*
1
Tj
Tstg
I
D
*
1
Rating
120
120
7
1.5
3.0
20
150
–55 to +150
1.5
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
120
7
—
—
2000
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.5
2.0
Max
—
—
100
10
30000
1.5
2.0
2.0
2.5
3.0
—
—
V
V
V
V
V
µs
µs
Unit
V
V
µA
µA
Test conditions
I
C
= 10 mA, R
BE
=
∞
I
E
= 50 mA, I
C
= 0
V
CB
= 120 V, I
E
= 0
V
CE
= 100 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 1 A*
1
I
C
= 1 A, I
B
= 1 mA*
1
I
C
= 1.5 A, I
B
= 1.5 mA*
1
I
C
= 1 A, I
B
= 1 mA*
1
I
C
= 1.5 A, I
B
= 1.5 mA*
1
I
D
= 1.5 A*
1
I
C
= 1 A, I
B1
= –I
B2
= 1 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note:
1. Pulse test.
h
FE
V
CE (sat)1
V
CE (sat)2
V
BE (sat)1
V
BE (sat)2
V
D
Ton
Toff
2
2SD1376(K)
Maximum Collector Dissipation Curve
30
Collector power dissipation Pc (W)
10
3
1.0
0.3
0.1
0.03 Ta = 25°C
1 shot pulse
0.01
0
50
100
Case temperature T
C
(°C)
150
3
10
30
100
Collector to emitter voltage V
CE
(V)
300
i
C (peak)
10
0
µ
Area of Safe Operation
1
µ
s
Collector current I
C
(A)
20
I
C (max)
s
PW
DC
(T
C
s
1 m
ms
0
=1
C)
5
°
=2
10
Typical Output Characteristics
5
T
C
= 25°C
DC current transfer ratio h
FE
30,000
10,000
3,000
1,000
DC Current Transfer Ratio
vs. Collector Current
Collector current I
C
(A)
4
3 1
3
0.5
0.3
0.2
P
C
T
C
5
°
=7
C
–2
5
=2
0W
2
I
B
= 0.1 m
A
25
300
100
30
0.03
V
CE
= 3 V
Pulse test
0.1
0.3
1.0
Collector current I
C
(A)
3
1
0
2
4
6
8
Collector to emitter voltage V
CE
(V)
10
3
2SD1376(K)
Collector to emitter saturation voltage V
CE (sat)
(V)
Base to emitter saturation voltage V
BE (sat)
(V)
Saturation Voltage vs. Collector Current
10
3
1.0
V
CE (sat)
0.3
l
C
/l
B
= 500
0.1
0.03
0.01
0.03
Ta = 25°C
Pulse test
0.1
0.3
1.0
Collector current I
C
(A)
3
200
10
3
Switching time t (µs)
1.0
t
on
0.3
t
f
0.1
0.03
0.01
0.03
Ta = 25°C
V
CC
= 30 V
I
C
= 500 I
B1
= –500 I
B2
Pulse test
0.1
0.3
1.0
Collector current I
C
(A)
3
t
stg
Switching Time vs. Collector Current
V
BE (sat)
Transient Thermal Resistance
100
Thermal resistance
θ
j-c
(°C/W)
30
10
3
1.0
0.3
0.1
0.1
0.1
T
C
= 25°C
1.0
1.0
Time t
10
10
100 (s)
100 (ms)
0.1 to 100 s
0.1
00
to 1
ms
4
Unit: mm
8.0
±
0.5
0
°
12
φ
3.1
+0.15
–0.1
3.7
±
0.7
11.0
±
0.5
2.7
±
0.4
12
0
°
2.3
±
0.3
120°
1.1
15.6
±
0.5
0.8
2.29
±
0.5
2.29
±
0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
—
—
0.67 g
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