2SD1376K datasheet, PDF - EEWORLD Datasheet

2SD1376K: DescriptionSilicon NPN Epitaxial; CategoryDiscrete semiconductor The transistor; File Size29KB，6 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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2SD1376K Overview

Silicon NPN Epitaxial

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	120 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	2000
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	20 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

2SD1376(K)

Silicon NPN Epitaxial

Application

Low frequency power amplifier complementary pair with 2SB1012(K)

Outline

TO-126 MOD

1. Emitter

2. Collector

3. Base

6 kΩ

(Typ)

0.5 kΩ

(Typ)

	2SD1376K	2SD1376
Description	Silicon NPN Epitaxial	Silicon NPN Epitaxial

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