MBM29PL64LM10PCN-E1 datasheet, PDF

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MBM29PL64LM10PCN-E1: DescriptionFlash, 4MX16, 100ns, PDSO56, PLASTIC, TSOP1-56; Categorystorage storage; File Size494KB，72 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/; Environmental Compliance

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MBM29PL64LM10PCN-E1 Overview

Flash, 4MX16, 100ns, PDSO56, PLASTIC, TSOP1-56

MBM29PL64LM10PCN-E1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TSOP1
package instruction	PLASTIC, TSOP1-56
Contacts	56
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	100 ns
Spare memory width	8
JESD-30 code	R-PDSO-G56
JESD-609 code	e3
length	18.4 mm
memory density	67108864 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	56
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-20 °C
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	TIN
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
type	NOR TYPE
width	14 mm
Base Number Matches	1

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MBM29PL64LM

90/10

Data Sheet

(Retired Product)

MBM29PL64LM

90/10

Cover Sheet

This product has been retired and is not recommended for new designs. Availability of this document is retained for reference

and historical purposes only.

Continuity of Specifications

There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

made are the result of normal data sheet improvement and are noted in the document revision summary.

For More Information

Please contact your local sales office for additional information about Spansion memory solutions.

Publication Number

MBM29PL64LM

Revision

DS05-20902-2E

Issue Date

July 31, 2007

MBM29PL64LM

90/10

(Continued)

The standard MBM29PL64LM offers access times of 90 ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE),

and output enable (OE) controls.

The MBM29PL64LM supports command set compatible with JEDEC single-power-supply EEPROMS standard.

Commands are written into the command register. The register contents serve as input to an internal state-

machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and

data needed for the programming and erase operations. Reading data out of the devices is similar to reading

from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29PL64LM is programmed by executing the program command sequence. This will invoke the Em-

bedded Program Algorithm

which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margin. Erase is accomplished by executing the erase command sequence. This will

invoke the Embedded Erase Algorithm

which is an internal algorithm that automatically preprograms the array

if it is not already programmed before executing the erase operation. During erase, the device automatically

times the erase pulse widths and verifies proper cell margin.

The device also features a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. All sectors are erased when shipped from the factory.

The device features single 3.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

by the Toggle Bit feature on DQ

. Once the end of a program or erase cycle has been completed, the devices

internally return to the read mode.

Fujitsu Flash technology combines years of Flash memory manufacturing experience to produce the highest

levels of quality, reliability, and cost effectiveness. The devices electrically erase all bits within a sector simulta-

neously via hot-hole assisted erase. The words are programmed one word at a time using the EPROM program-

ming mechanism of hot electron injection.

Retired Product DS05-20902-2E_July 31, 2007

MBM29PL64LM10PCN-E1 Related Products

	MBM29PL64LM10PCN-E1	MBM29PL64LM90PBT-E1	MBM29PL64LM90PCN-E1	MBM29PL64LM10PBT-E1	MBM29PL64LM90TN-E1	MBM29PL64LM10TN-E1
Description	Flash, 4MX16, 100ns, PDSO56, PLASTIC, TSOP1-56	Flash, 4MX16, 90ns, PBGA80, PLASTIC, FBGA-80	Flash, 4MX16, 90ns, PDSO56, PLASTIC, TSOP1-56	Flash, 4MX16, 100ns, PBGA80, PLASTIC, FBGA-80	Flash, 4MX16, 90ns, PDSO48, PLASTIC, TSOP1-48	Flash, 4MX16, 100ns, PDSO48, PLASTIC, TSOP1-48
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	TSOP1	BGA	TSOP1	BGA	TSOP1	TSOP1
package instruction	PLASTIC, TSOP1-56	PLASTIC, FBGA-80	PLASTIC, TSOP1-56	PLASTIC, FBGA-80	PLASTIC, TSOP1-48	PLASTIC, TSOP1-48
Contacts	56	80	56	80	48	48
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A
Maximum access time	100 ns	90 ns	90 ns	100 ns	90 ns	100 ns
Spare memory width	8	8	8	8	8	8
JESD-30 code	R-PDSO-G56	R-PBGA-B80	R-PDSO-G56	R-PBGA-B80	R-PDSO-G48	R-PDSO-G48
JESD-609 code	e3	e1	e3	e1	e3	e3
length	18.4 mm	11 mm	18.4 mm	11 mm	18.4 mm	18.4 mm
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1
Number of terminals	56	80	56	80	48	48
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	70 °C	85 °C	70 °C	85 °C
Minimum operating temperature	-20 °C	-20 °C	-20 °C	-20 °C	-20 °C	-20 °C
organize	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	TFBGA	TSOP1	TFBGA	TSOP1	TSOP1
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Programming voltage	3 V	3 V	3 V	3 V	3 V	3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	COMMERCIAL	COMMERCIAL	OTHER	COMMERCIAL	OTHER
Terminal surface	TIN	TIN SILVER COPPER	TIN	TIN SILVER COPPER	MATTE TIN	TIN
Terminal form	GULL WING	BALL	GULL WING	BALL	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.8 mm	0.5 mm	0.8 mm	0.5 mm	0.5 mm
Terminal location	DUAL	BOTTOM	DUAL	BOTTOM	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40	40	40
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
width	14 mm	7 mm	14 mm	7 mm	12 mm	12 mm
Base Number Matches	1	1	1	1	-	-

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