EEWORLDEEWORLDEEWORLD

Part Number

Search

2SD1423

Description
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
CategoryDiscrete semiconductor    The transistor   
File Size450KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

2SD1423 Overview

Low-Power, Single/Dual-Level Battery Monitors with Hysteresis

2SD1423 Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1423A
Silicon NPN epitaxial planar type
For low-frequency amplification
Complementary to 2SB1030A
Features
Optimum for high-density mounting
Allowing supply with the radial taping
Package
Code
NS-B1
Name
Pin
1: Emitter
2: Collector
3: Base
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector power dissipation
T
stg
–55 to +150
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE2
V
CE(sat)
f
T
C
ob
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
60
50
7
V
V
V
0.5
1
A
A
300
150
mW
°C
°C
Conditions
Min
60
7
50
Typ
Max
I
C
= 10
mA,
I
E
= 0
I
C
= 2 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 20 V, I
B
= 0
0.1
1
V
CE
= 10 V, I
C
= 150 mA
V
CE
= 10 V, I
C
= 500 mA
85
40
340
0.6
I
C
= 300 mA, I
B
= 30 mA
V
CB
= 10 V, I
E
=
-50
mA, f = 200 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
200
6
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Symbol
Rating
Unit
Unit
V
V
V
mA
mA
V
MHz
pF
Collector-emitter cutoff current (Base open)
/D
Collector-emitter saturation voltage
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
Pl
Collector output capacitance
(Common base, input open circuited)
Ma
int
en
an
Forward current transfer ratio
ce
isc
on
Collector-base cutoff current (Emitter open)
tin
h
FE1 *
ue
di
Collector-emitter voltage (Base open)
15
Publication date: October 2008
SJC00429AED
1

2SD1423 Related Products

2SD1423 2SD1423A 2SD1423ARA
Description Low-Power, Single/Dual-Level Battery Monitors with Hysteresis Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANS NPN 50V 0.5A NS-B1
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 -
Reach Compliance Code unknow unknow -
ECCN code EAR99 EAR99 -
Maximum collector current (IC) 0.5 A 0.5 A -
Collector-emitter maximum voltage 25 V 50 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 40 40 -
JESD-30 code R-PSIP-T3 R-PSIP-T3 -
Number of components 1 1 -
Number of terminals 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form IN-LINE IN-LINE -
Polarity/channel type NPN NPN -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE -
transistor applications AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 200 MHz 200 MHz -
Base Number Matches 1 1 -
Silicon Valley is bad, China is good
高科技业员工在过去10年所走的路并不平坦,他们在过去9年中的薪酬亦减少了12%,反映出矽谷工作薪酬的反复无常以及网路业泡沬爆破后,矽谷高科业的再次挣扎。  根据联邦劳工局的统计资料,2000年矽谷11个高科技行业的员工平均年薪为120,000元,当时投资者投入的资金争先恐后地来到矽谷,而高科员工更因人才缺乏而成为企业界争取的对象。  疯狂时期已不再  到了2002年,矽谷高科员工情况转逆,员工的年...
凯哥 Talking about work
How to display the startup logo?
I am using the ARM of i.mx35. How can I display the boot logo? What code do I need to add to the BSP?...
yuri_su Embedded System
The second landlord is such a rip-off
The sub-landlords in Shanghai are so corrupt that they charge 1500 last year and 2000 this year. Many people have moved to more distant places for a bedroom of more than 10 square meters. These sub-la...
平行电 Talking
In the SCI data frame format, is the address bit in the first position or in the middle? There seems to be a contradiction in the datasheet.
[color=#000]Excuse me, the SCI frame format given in the TI28335 PDF is as above. Start bit/data bit/address bit and then check bit. But in the subsequent description, it says The first byte of a bloc...
jonny0811 Microcontroller MCU
Let’s ride together, don’t be afraid!
I will use the title of Zhuge's post:pleased:. I will share my sports experience with you. My personal hobby is cycling. I live in Chengdu, Sichuan. I usually ride with my friends at night, go hiking ...
xxxlzjxxx Talking
Ethernet Tutorial Episodes 1-4
Ethernet Tutorial Episodes 1-4...
bobozhu83610 MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 557  1511  1674  166  2376  12  31  34  4  48 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号