EEWORLDEEWORLDEEWORLD

Part Number

Search

2SD1423A

Description
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
CategoryDiscrete semiconductor    The transistor   
File Size450KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

2SD1423A Overview

Low-Power, Single/Dual-Level Battery Monitors with Hysteresis

2SD1423A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1423A
Silicon NPN epitaxial planar type
For low-frequency amplification
Complementary to 2SB1030A
Features
Optimum for high-density mounting
Allowing supply with the radial taping
Package
Code
NS-B1
Name
Pin
1: Emitter
2: Collector
3: Base
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector power dissipation
T
stg
–55 to +150
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE2
V
CE(sat)
f
T
C
ob
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
60
50
7
V
V
V
0.5
1
A
A
300
150
mW
°C
°C
Conditions
Min
60
7
50
Typ
Max
I
C
= 10
mA,
I
E
= 0
I
C
= 2 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 20 V, I
B
= 0
0.1
1
V
CE
= 10 V, I
C
= 150 mA
V
CE
= 10 V, I
C
= 500 mA
85
40
340
0.6
I
C
= 300 mA, I
B
= 30 mA
V
CB
= 10 V, I
E
=
-50
mA, f = 200 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
200
6
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Symbol
Rating
Unit
Unit
V
V
V
mA
mA
V
MHz
pF
Collector-emitter cutoff current (Base open)
/D
Collector-emitter saturation voltage
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
Pl
Collector output capacitance
(Common base, input open circuited)
Ma
int
en
an
Forward current transfer ratio
ce
isc
on
Collector-base cutoff current (Emitter open)
tin
h
FE1 *
ue
di
Collector-emitter voltage (Base open)
15
Publication date: October 2008
SJC00429AED
1

2SD1423A Related Products

2SD1423A 2SD1423 2SD1423ARA
Description Low-Power, Single/Dual-Level Battery Monitors with Hysteresis Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANS NPN 50V 0.5A NS-B1
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 -
Reach Compliance Code unknow unknow -
ECCN code EAR99 EAR99 -
Maximum collector current (IC) 0.5 A 0.5 A -
Collector-emitter maximum voltage 50 V 25 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 40 40 -
JESD-30 code R-PSIP-T3 R-PSIP-T3 -
Number of components 1 1 -
Number of terminals 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form IN-LINE IN-LINE -
Polarity/channel type NPN NPN -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE -
transistor applications AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 200 MHz 200 MHz -
Base Number Matches 1 1 -

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1590  1401  177  611  789  33  29  4  13  16 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号