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2SD1504

Description
Silicon NPN Epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size29KB,7 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SD1504 Overview

Silicon NPN Epitaxial

2SD1504 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSPAK-3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1
2SD1504
Silicon NPN Epitaxial
Application
Low frequency amplifier, Muting
Outline
SPAK
1
23
1. Emitter
2. Collector
3. Base
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