DATA SHEET
SILICON TRANSISTORS
2SD1615, 2SD1615A
NPN SILICON EPITAXIAL TRANSISTORS
POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially
in Hybrid Integrated Circuits.
FEATURES
• World Standard Miniature Package
• Low V
CE (sat)
V
CE(sat)
= 0.15 V
• Complement to 2SB1115, 2SD1115A
PACKAGE DIMENSIONS
in millimeters
4.5 ± 0.1
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (T
A
= 25 ˚C) 2SD1615 2SD1615A
Collector to Base Voltage
V
CBO
60
120
Collector to Emitter Voltage
V
CEO
50
60
Emitter to Base Voltage
V
EBO
6
Collector Current (DC)
I
C
1
Collector Current (Pulse)*
I
C
2
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature** P
T
2.0
Maximum Temperatures
Junction Temperature
T
j
150
–55 to +150
Storage Temperature Range
T
stg
*
PW
≤
10 ms, Duty Cycle
≤
50 %
**
When mounted on ceramic substrate of 16 cm
2
×
0.7 mm
V
V
A
A
A
W
˚C
˚C
1.6 ± 0.2
4.0 ± 0.25
1.5 ± 0.1
0.8 MIN.
E
0.42
± 0.06
C
B
0.42 ± 0.06
1.5
0.47
± 0.06
3.0
1. Emitter
2. Collector
3. Base
0.03
0.41
+ 0.05
–
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
SYMBOL
I
CBO
I
EBO
h
FE1
***
h
FE2
***
V
CE(sat)
***
V
BE(sat)
***
V
BE
***
f
T
600
80
160
135
135
81
270
0.15
0.9
0.3
1.2
700
V
V
mV
MHz
290
MIN.
TYP.
MAX. UNIT
100
100
100
600
400
nA
nA
nA
2SD1615
2SD1615A
2SC1615
2SD1615A
V
CE
= 2.0 V, I
C
= 1.0 A
I
C
= 1.0 A, I
B
= 50 mA
I
C
= 1.0 A, I
B
= 50 mA
V
CE
= 2.0 V, I
C
= 50 mA
V
CE
= 2.0 V, I
E
= –100 mA
TEST CONDITIONS
V
CB
= 60 V, I
E
= 0
V
CB
= 120 V, I
E
= 0
V
CE
= 2.0 V, I
C
= 100 mA
V
EB
= 6.0 V, I
C
= 0
Output Capacitance
C
ob
19
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
***
Pulsed: PW
≤
350
µ
s, Duty Cycle
≤
2 %
h
FE
Classification
MARKING
h
FE
Document No. D10198EJ3V0DSD0 (3rd edition)
(Previous No. TC-5810A)
Date Published June 1995 P
Printed in Japan
2SD1615
2SD1615A
GM
GQ
135 to 270
GL
GP
200 to 400
GK
300 to 600
2.5 ± 0.1
©
1985
2SD1615, 2SD1615A
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
SAFE OPERATING AREA
(TRANSIENT THERMAL RESISTANCE
METHOD)
5
1 pulse
2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
s
m
=1
PW
s
m
10
P
T
– Total Power Dissipation – W
2.0
I
C
– Collector Current – A
W
nm
he
d
nte
ou
1
0.5
1.5
20
0
m
s
ram
ce
on
ic
t ra
bs
su
1.0
0.2
0.1
DC
te
cm
16
of
2SD1615
2SD1615A
0.5
with
ou
t hea
0.05
2
.7
×
0
mm
0.02
200
0.01
tsink
0
40
80
120
160
T
A
– Ambient Temperature – ˚C
1
2
5
10
20
50
V
CE
– Collector to Emitter Voltage – V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1.0
100
300
µ
A
200
µ
A
5.0 mA
4.5 mA
4
.0
m
A
3.5
mA
3.0 mA
2.5 mA
80
0.8
I
C
– Collector Current – mA
I
C
– Collector Current – A
200
µ
A
60
2.0 mA
0.6
150
µ
A
40
1.5 mA
0.4
1.0 mA
I
B
= 0.5 mA
100
µ
A
I
B
= 50
µ
A
20
0.2
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
V
CE
– Collector to Emitter Voltage – V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE(sat)
– Collector Saturation Voltage – V
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
V
CE(sat)
– Collector Saturation Voltage – V
V
BE(sat)
– Base Saturation Voltage – V
1000
V
CE
= 2.0 V
500
2
1
0.5
0.2
0.1
0.05
0.02
0.01 0.02
0.05 0.1 0.2
0.5
1
2
t)
I
C
= 20·I
B
V
BE(sat)
h
EF
– DC Current Gain
200
100
50
20
10
5
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
V
CE
(sa
5
10
I
C
– Collector Current – A
I
C
– Collector Current – A
2
2SD1615, 2SD1615A
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
1000
500
f
T
– Gain Bandwidth Product – MH
Z
200
100
50
20
10
5
2
1
0.01 0.02
0.05 0.1 0.2
0.5 1 2
I
C
– Collector Current – A
5
10
1
C
ob
– Output Capacitance – pF
V
EC
= 2.0 V
100
50
OUTPUT CAPCITANCE vs.
COLLECTOR TO BASE VOLTAGE
I
E
= 0
f = 1.0 MH
Z
20
10
5
2
2
5
10
20
50
V
CB
– Collector to Base Voltage – V
100
SWITCHING TIME vs.
COLLECTOR CURRENT
2
1
t – Switching Time –
µ
s
0.5
V
CC
= 10 V
I
C
= 10.I
BI
= –10.I
B2
V
BE(off)
= –2 to 3 V
.
PW = 2
µ
s
.
Duty Cycle
≤
2 %
t
stg
0.2
0.1
0.05
t
f
t
on
0.01 0.02
0.05 0.1
0.2
I
C
– Collector Current – A
0.5
1
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system.
Quality grade on NEC semiconductor devices.
Semiconductor device mounting technology manual.
Semiconductor device package manual.
Guide to quality assurance for semiconductor devices.
Semiconductor selection guide.
Document No.
TEI-1202
IEI-1209
IEI-1207
IEI-1213
MEI-1202
MF-1134
3
2SD1615, 2SD1615A
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
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