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NX8570SC326-BA

Description
1550 nm, LASER DIODE
CategoryLED optoelectronic/LED    photoelectric   
File Size158KB,15 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

NX8570SC326-BA Overview

1550 nm, LASER DIODE

NX8570SC326-BA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER
Number of functions1
Maximum operating temperature70 °C
Minimum operating temperature-20 °C
Optoelectronic device typesLASER DIODE
Nominal output power20 mW
peak wavelength1550 nm
shapeRECTANGULAR
Maximum threshold current40 mA
Base Number Matches1
DATA SHEET
LASER DIODE
NX8570 Series
1 550 nm CW LIGHT SOURCE
InGaAsP MQW-DFB LASER DIODE MODULE
WITH WAVELENGTH MONITOR
DESCRIPTION
The NX8570 Series is a 1 550 nm Multiple Quantum Well (MQW)
structured Distributed Feed-Back (DFB) laser diode module with wavelength
monitor function.
This device is temperature tunable over 4
×
50 GHz
channels. Available at both C-band (1 530.334 to 1 565.087 nm) and L-band
(1 565.496 to 1 608.760 nm) ITU-T grid wavelengths.
This device is designed as CW light source and ideal for transmission
systems in which external modulators are used.
FEATURES
• Wavelength monitor function (Etalon Filter, Wavelength monitor PD)
• Optical output power : P
f
= 20 mW MIN.
• Available for DWDM wavelengths based on ITU-T recommendations
(50 GHz grid, please refer to the
ORDERING INFORMATION)
• 4 channel wavelength tunable capability for 50 GHz-spacing
(NX8570SC×××D)
• Internal thermo-electric cooler and isolator
• Hermetically sealed 14-pin butterfly package
• Polarization maintain fiber pigtail
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10135EJ04V0DS (4th edition)
Date Published September 2005 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2002, 2005
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