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NX8570SC803-BA-A

Description
LASER DIODE W/MONITOR,1.58UM PEAK WAVELENGTH,MODULE-BF
CategoryLED optoelectronic/LED    photoelectric   
File Size795KB,14 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

NX8570SC803-BA-A Overview

LASER DIODE W/MONITOR,1.58UM PEAK WAVELENGTH,MODULE-BF

NX8570SC803-BA-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
Maximum forward current0.3 A
Maximum forward voltage2.5 V
Maximum operating temperature70 °C
Minimum operating temperature-5 °C
Optoelectronic device typesLASER DIODE
peak wavelength1580 nm
Semiconductor materialInGaAsP
Base Number Matches1
LASER DIODE
NX8570 Series
1 550 nm CW LIGHT SOURCE
InGaAsP MQW-DFB LASER DIODE MODULE
WITH WAVELENGTH MONITOR
DESCRIPTION
The NX8570 Series is a 1 550 nm Multiple Quantum Well (MQW)
structured Distributed Feed-Back (DFB) laser diode module with wavelength
monitor function.
This device is temperature tunable over 4
×
50 GHz
channels. Available at both C-band (1530.334 to 1565.087 nm) and L-band
(1565.496 to 1608.760 nm) ITU-T grid wavelengths.
This device is designed as CW light source and ideal for transmission
systems in which external modulators are used.
FEATURES
• Wavelength monitor function (Etalon Filter, Wavelength monitor PD)
• Optical output power: P
f
= 20 mW MIN.
• Available for DWDM wavelengths based on ITU-T recommendations
(50 GHz grid)
• 4-channel wavelength tunable capability for 50 GHz-spacing
(NX8570S××××D)
• Internal thermo-electric cooler and isolator
• Hermetically sealed 14-pin butterfly package
• Polarization maintain fiber pigtail
Document No. PL10135EJ03V0DS (3rd edition)
Date Published June 2004 CP (K)
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 2002, 2004
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