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2SD2382

Description
Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size21KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Environmental Compliance
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2SD2382 Overview

Power Transistor

2SD2382 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220F
package instructionTO-220F, FULL PACK-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)6 A
Collector-emitter maximum voltage70 V
ConfigurationSINGLE
Minimum DC current gain (hFE)700
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
Power Transistor 2SD2382
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
Tstg
Ratings
65±5
65±5
6
±6
(pulse
±10)
1
30 (Tc=25ºC)
150
–55 to +150
Unit
V
V
V
A
A
W
ºC
ºC
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
V
FEC
Es/b
Test Conditions
V
CB
= 60V
V
EB
= 6V
I
C
= 50mA
V
CE
= 1V, I
C
= 1A
I
C
= 1.5A, I
B
= 15mA
I
FEC
= 6A
L = 10mH, single pulse
Ratings
10max
10max
60 to 70
700 to 3000
0.15max
1.5max
200min
4
(Ta=25ºC)
Unit
µA
µA
V
V
V
mJ
External Dimensions
FM20 (full-mold)
10.0
4.2
2.8
3.3
C0.5
8.4
a
b
16.9
Typical Switching Characteristics
V
CC
(V)
12
R
L
(Ω)
12
I
C
(A)
1
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
30
I
B2
(mA)
–30
t
on
(µs)
0.25
t
stg
(µs)
0.8
t
f
(µs)
0.35
2.54
2.2
1.35
1.35
0.85
2.54
3.9
0.8
2.6
(13.5)
0.45
B C E
a) Type No.
b) Lot No.
(Unit: mm)
s
I
C
— V
CE
Characteristics (typ.)
10
30mA
8
20mA
s
V
CE
(sat) — I
B
Temperature Characteristics (typ.)
0.75
(I
C
= 1.5A)
s
I
C
— V
BE
Temperature Characteristics (typ.)
6
5
V
CE
(sat)
(V
)
10mA
0.5
4
I
C
(A
)
I
C
(A
)
6
5mA
4
3mA
I
B
= 1mA
0.25
Ta = –55ºC
25ºC
75ºC
125ºC
3
2
1
Ta=55ºC
25ºC
75ºC
125ºC
2
0
0
1
2
3
4
5
0
1
5
10
50 100
400
0
0
0.5
1.0
1.5
V
CE
(V
)
I
B
(mA
)
V
BE
(V
)
s
h
FE
— I
C
Characteristics (typ.)
5000
Typ
1000
(V
CE
= 1V)
s
h
FE
— I
C
Temperature Characteristics (typ.)
5000
(V
CE
= 1V)
s
j-a
— t
Characteristics
5
1000
h
FE
h
FE
500
500
100
50
30
0.01
100
50
30
0.01
Ta = –55ºC
25ºC
75ºC
125ºC
0.05 0.1
0.5
1
5
10
(
ºC/
W)
j-a
1
0.5
0.3
1
5
10
50 100
500 1000
0.05 0.1
0.5
1
5
10
I
C
(A
)
I
C
(A
)
t (ms
)
s
f
T
— I
E
Characteristics (typ.)
30
25
20
Typ
(V
CE
= 1V)
s
Safe Operating Area (single pulse)
20
c
mse
0.5
ec
1ms
ec
ms
10
c
se
0m
10
s
P
C
— Ta Derating
30
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
10
5
D.
C
I
C
(A
)
=
P
C
(
W
)
(T
c
20
W
ith
in
f
T
(
MHz)
15
10
5
0
–0.01
1
0.5
Without heatsink
natural air cooling
25
ºC
)
fin
10
15
0
100
• 150
•1
00
2
•2
50 • 5
0•2
Without heatsink
ite
he
at
sin
k
0.1
–0.05 –0.1
–0.5 –1
–5 –10
1
5
10
50
100
0
0
50
100
150
I
E
(A
)
V
CE
(V
)
Ta (ºC)
59
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