RN2707~RN2709
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2707,RN2708,RN2709
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in USV (ultra super mini type with 5 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1707 to RN1709
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2707
RN2708
RN2709
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
USV
JEDEC
―
JEITA
―
TOSHIBA
2-2L1A
Weight: 6.2 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2707 to 2709
RN2707
Emitter-base voltage
RN2708
RN2709
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2707 to 2709
I
C
P
C
*
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
200
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
(top view)
Equivalent Circuit
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
1
2010-05-12
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