RN2707TE85L datasheet, PDF - EEWORLD Datasheet

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RN2707TE85L: DescriptionTRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size313KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2707TE85L Overview

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN2707TE85L Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknown
Other features	BUILT-IN BIAS RESISTOR RATIO IS 0.213
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G5
Number of components	2
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

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RN2707~RN2709

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2707,RN2708,RN2709

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Including two devices in USV (ultra super mini type with 5 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1707 to RN1709

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2707

RN2708

RN2709

R1 (kΩ)

R2 (kΩ)

USV

JEDEC

―

JEITA

―

TOSHIBA

2-2L1A

Weight: 6.2 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN2707 to 2709

RN2707

Emitter-base voltage

RN2708

RN2709

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2707 to 2709

stg

EBO

Symbol

CBO

CEO

Rating

−50

−6

−7

−15

−100

200

150

−55~150

°C

Unit

(top view)

Equivalent Circuit

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating

2010-05-12

RN2707TE85L Related Products

	RN2707TE85L	RN2707(TE85L)	RN2707(TE85R)	RN2707TE85R
Description	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Reach Compliance Code	unknown	unknown	unknown	unknown
Other features	BUILT-IN BIAS RESISTOR RATIO IS 0.213	BUILT-IN BIAS RESISTOR RATIO IS 0.213	BUILT-IN BIAS RESISTOR RATIO IS 0.213	BUILT-IN BIAS RESISTOR RATIO IS 0.213
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	80	80	80
JESD-30 code	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5
Number of components	2	2	2	2
Number of terminals	5	5	5	5
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz
Base Number Matches	1	1	1	1

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