2SD661A datasheet, PDF - EEWORLD Datasheet

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2SD661A: DescriptionSilicon NPN epitaxial planer type(For low-frequency and low-noise amplification); CategoryDiscrete semiconductor The transistor; File Size39KB，3 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SD661A Overview

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

2SD661A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	SC-71
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	55 V
Configuration	SINGLE
Minimum DC current gain (hFE)	210
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.4 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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Transistor

2SD661, 2SD661A

Silicon NPN epitaxial planer type

For low-frequency and low-noise amplification

Unit: mm

6.9±0.1

1.5

2.5±0.1

1.0

2.4±0.2 2.0±0.2 3.5±0.1

s

q

Features

Low noise voltage NV.

High foward current transfer ratio h

FE

.

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

(Ta=25˚C)

Ratings

35

55

35

55

7

200

100

400

150

–55 ~ +150

Unit

1.5 R0.9

R0.9

0.4

1.0±0.1

R

0.

0.85

Parameter

Collector to

base voltage

Collector to

2SD661

2SD661A

2SD661

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

3

2

1

V

2.5

emitter voltage 2SD661A

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

V

mA

mW

˚C

1:Base

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

s

Electrical Characteristics

Parameter

Collector cutoff current

Collector to base

voltage

Collector to emitter

voltage

2SD661

2SD661A

2SD661

2SD661A

(Ta=25˚C)

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

f

T

NV

*

1.25±0.05

s

Absolute Maximum Ratings

0.55±0.1

0.45±0.05

Conditions

V

CB

= 20V, I

E

= 0

V

CE

= 20V, I

B

= 0

I

C

= 10µA, I

E

= 0

I

C

= 2mA, I

B

= 0

I

E

= 10µA, I

C

= 0

V

CE

= 10V, I

C

= 2mA

I

C

= 100mA, I

B

= 10mA

V

CB

= 10V, I

E

= –2mA, f = 200MHz

V

CE

= 10V, I

C

= 1mA, G

V

= 80dB

R

g

= 100kΩ, Function = FLAT

min

typ

max

0.1

1

4.1±0.2

4.5±0.1

7

Unit

µA

V

35

55

35

55

7

210

650

1

200

150

V

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Noise voltage

*

h

V

CE(sat)

V

MHz

mV

FE

Rank classification

R

210 ~ 340

S

290 ~ 460

T

360 ~ 650

h

FE

Rank

1

2SD661A Related Products

	2SD661A	2SD661
Description	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
Is it Rohs certified?	incompatible	incompatible
Parts packaging code	SC-71	SC-71
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	55 V	35 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	210	210
JESD-30 code	R-PSIP-T3	R-PSIP-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	135 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.4 W	0.3 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz
Base Number Matches	1	1

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