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2SD661

Description
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
CategoryDiscrete semiconductor    The transistor   
File Size39KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

2SD661 Overview

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

2SD661 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSC-71
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage35 V
ConfigurationSINGLE
Minimum DC current gain (hFE)210
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature135 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1
1.5
2.5±0.1
1.0
1.0
2.4±0.2 2.0±0.2 3.5±0.1
s
q
q
q
Features
Low noise voltage NV.
High foward current transfer ratio h
FE
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(Ta=25˚C)
Ratings
35
55
35
55
7
200
100
400
150
–55 ~ +150
Unit
1.5 R0.9
R0.9
0.4
1.0±0.1
R
0.
0.85
Parameter
Collector to
base voltage
Collector to
2SD661
2SD661A
2SD661
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
3
2
1
V
2.5
2.5
emitter voltage 2SD661A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
˚C
˚C
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SD661
2SD661A
2SD661
2SD661A
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
f
T
NV
*
1.25±0.05
s
Absolute Maximum Ratings
0.55±0.1
0.45±0.05
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
min
typ
max
0.1
1
4.1±0.2
4.5±0.1
7
Unit
µA
µA
V
35
55
35
55
7
210
650
1
200
150
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
*
h
V
CE(sat)
V
MHz
mV
FE
Rank classification
R
210 ~ 340
S
290 ~ 460
T
360 ~ 650
h
FE
Rank
1

2SD661 Related Products

2SD661 2SD661A
Description Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
Is it Rohs certified? incompatible incompatible
Parts packaging code SC-71 SC-71
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 35 V 55 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 210 210
JESD-30 code R-PSIP-T3 R-PSIP-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 135 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.4 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
Base Number Matches 1 1
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