MMDJ-65609EV-40-E datasheet, PDF

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MMDJ-65609EV-40-E: DescriptionStandard SRAM, 128KX8, 40ns, CMOS; Categorystorage storage; File Size838KB，15 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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MMDJ-65609EV-40-E Overview

Standard SRAM, 128KX8, 40ns, CMOS

MMDJ-65609EV-40-E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	QFF,
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	40 ns
JESD-30 code	R-XDFP-F32
length	20.825 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	UNSPECIFIED
encapsulated code	QFF
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum seat height	2.72 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
total dose	200k Rad(Si) V
width	10.415 mm
Base Number Matches	1

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Features

•

Operating Voltage: 3.3V

•

Access Time: 40 ns

•

Very Low Power Consumption

•

– Active: 160 mW (Max)

– Standby: 70 µW (Typ)

Wide Temperature Range: -55⋅°C to +125⋅°C

MFP 32 leads 400 Mils Width Package

TTL Compatible Inputs and Outputs

Asynchronous

Designed on 0.35µm Process

No Single Event Latch-up below a LET threshold of 80 MeV/mg/cm

@125 °C

Radiation Tolerance

(1)

– Tested up to a Total Dose of 300 krad (Si)

– RHA capability of 100 krad (Si) according to MIL STD 883 Method 1019

Quality grades: QML Q or V with SMD 5962-02501

1. tolerance to MBU’s may need to be enhanced by the application

Notes:

Description

The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.

Utilizing an array of six transistors (6T) memory cells, the M65609E combines an

extremely low standby supply current with a fast access time at 40 ns. The high stabil-

ity of the 6T cell provides excellent protection against soft errors due to noise.

The M65609E is processed according to the methods of the latest revision of the MIL

PRF 38535 and ESCC 9000.

It is produced on the same process as the MH1RT sea of gates series.

Rad Hard

128K x 8

3.3-volt

Very Low Power

CMOS SRAM

M65609E

4158J–AERO–11/13

MMDJ-65609EV-40-E Related Products

	MMDJ-65609EV-40-E	5962-0250101VXC	5962R0250101VXC	MM0-65609EV-40-E	5962-0250101QXC	SMDJ-65609EV-40SCC	MM0-65609EV-40SV
Description	Standard SRAM, 128KX8, 40ns, CMOS	Standard SRAM, 128KX8, 40ns, CMOS	Standard SRAM, 128KX8, 40ns, CMOS	Standard SRAM, 128KX8, 40ns, CMOS	Standard SRAM, 128KX8, 40ns, CMOS	Standard SRAM, 128KX8, 40ns, CMOS	Standard SRAM, 128KX8, 40ns, CMOS
package instruction	QFF,	0.400 INCH, DFP-32	QFF, FL32,.4	DIE,	0.400 INCH, DFP-32	0.400 INCH, DFP-32	DIE
Reach Compliance Code	compliant	unknown	not_compliant	compliant	unknown	compliant	compliant
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	40 ns	40 ns	40 ns	40 ns	40 ns	40 ns	40 ns
JESD-30 code	R-XDFP-F32	R-XDFP-F32	R-XDFP-F32	R-XUUC-N	R-XDFP-F32	R-XDFP-F32	R-XUUC-N
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	QFF	QFF	QFF	DIE	QFF	QFF	DIE
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK	FLATPACK	UNCASED CHIP	FLATPACK	FLATPACK	UNCASED CHIP
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Qualified	Qualified	Not Qualified	Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	FLAT	FLAT	FLAT	NO LEAD	FLAT	FLAT	NO LEAD
Terminal location	DUAL	DUAL	DUAL	UPPER	DUAL	DUAL	UPPER
Is it Rohs certified?	incompatible	incompatible	incompatible	-	incompatible	-	-
length	20.825 mm	20.825 mm	20.825 mm	-	20.825 mm	20.825 mm	-
Number of terminals	32	32	32	-	32	32	-
Maximum seat height	2.72 mm	2.72 mm	2.72 mm	-	2.72 mm	2.72 mm	-
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	-	1.27 mm	1.27 mm	-
total dose	200k Rad(Si) V	200k Rad(Si) V	200k Rad(Si) V	200k Rad(Si) V	-	200k Rad(Si) V	-
width	10.415 mm	10.415 mm	10.415 mm	-	10.415 mm	10.415 mm	-
Base Number Matches	1	1	1	1	1	-	-
Maker	-	Microchip	Microchip	-	Microchip	Microchip	Microchip
Filter level	-	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	-	MIL-PRF-38535 Class Q	-	MIL-PRF-38535 Class V

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