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5962R0250101VXC

Description
Standard SRAM, 128KX8, 40ns, CMOS
Categorystorage    storage   
File Size838KB,15 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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5962R0250101VXC Overview

Standard SRAM, 128KX8, 40ns, CMOS

5962R0250101VXC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrochip
package instructionQFF, FL32,.4
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Is SamacsysN
Maximum access time40 ns
I/O typeCOMMON
JESD-30 codeR-XDFP-F32
JESD-609 codee4
length20.825 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeQFF
Encapsulate equivalent codeFL32,.4
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusQualified
Filter levelMIL-PRF-38535 Class V
Maximum seat height2.72 mm
Maximum standby current0.0015 A
Minimum standby current3 V
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
total dose200k Rad(Si) V
width10.415 mm
Base Number Matches1
Features
Operating Voltage: 3.3V
Access Time: 40 ns
Very Low Power Consumption
– Active: 160 mW (Max)
– Standby: 70 µW (Typ)
Wide Temperature Range: -55⋅°C to +125⋅°C
MFP 32 leads 400 Mils Width Package
TTL Compatible Inputs and Outputs
Asynchronous
Designed on 0.35µm Process
No Single Event Latch-up below a LET threshold of 80 MeV/mg/cm
2
@125 °C
Radiation Tolerance
(1)
– Tested up to a Total Dose of 300 krad (Si)
– RHA capability of 100 krad (Si) according to MIL STD 883 Method 1019
Quality grades: QML Q or V with SMD 5962-02501
1. tolerance to MBU’s may need to be enhanced by the application
Notes:
Description
The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.
Utilizing an array of six transistors (6T) memory cells, the M65609E combines an
extremely low standby supply current with a fast access time at 40 ns. The high stabil-
ity of the 6T cell provides excellent protection against soft errors due to noise.
The M65609E is processed according to the methods of the latest revision of the MIL
PRF 38535 and ESCC 9000.
It is produced on the same process as the MH1RT sea of gates series.
Rad Hard
128K x 8
3.3-volt
Very Low Power
CMOS SRAM
M65609E
4158J–AERO–11/13

5962R0250101VXC Related Products

5962R0250101VXC 5962-0250101VXC MMDJ-65609EV-40-E MM0-65609EV-40-E 5962-0250101QXC SMDJ-65609EV-40SCC MM0-65609EV-40SV
Description Standard SRAM, 128KX8, 40ns, CMOS Standard SRAM, 128KX8, 40ns, CMOS Standard SRAM, 128KX8, 40ns, CMOS Standard SRAM, 128KX8, 40ns, CMOS Standard SRAM, 128KX8, 40ns, CMOS Standard SRAM, 128KX8, 40ns, CMOS Standard SRAM, 128KX8, 40ns, CMOS
package instruction QFF, FL32,.4 0.400 INCH, DFP-32 QFF, DIE, 0.400 INCH, DFP-32 0.400 INCH, DFP-32 DIE
Reach Compliance Code not_compliant unknown compliant compliant unknown compliant compliant
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 40 ns 40 ns 40 ns 40 ns 40 ns 40 ns 40 ns
JESD-30 code R-XDFP-F32 R-XDFP-F32 R-XDFP-F32 R-XUUC-N R-XDFP-F32 R-XDFP-F32 R-XUUC-N
memory density 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1 1
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
organize 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code QFF QFF QFF DIE QFF QFF DIE
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK FLATPACK FLATPACK UNCASED CHIP FLATPACK FLATPACK UNCASED CHIP
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Qualified Qualified Not Qualified Not Qualified Qualified Not Qualified Not Qualified
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal form FLAT FLAT FLAT NO LEAD FLAT FLAT NO LEAD
Terminal location DUAL DUAL DUAL UPPER DUAL DUAL UPPER
Is it Rohs certified? incompatible incompatible incompatible - incompatible - -
Maker Microchip Microchip - - Microchip Microchip Microchip
length 20.825 mm 20.825 mm 20.825 mm - 20.825 mm 20.825 mm -
Number of terminals 32 32 32 - 32 32 -
Filter level MIL-PRF-38535 Class V MIL-PRF-38535 Class V - - MIL-PRF-38535 Class Q - MIL-PRF-38535 Class V
Maximum seat height 2.72 mm 2.72 mm 2.72 mm - 2.72 mm 2.72 mm -
Terminal pitch 1.27 mm 1.27 mm 1.27 mm - 1.27 mm 1.27 mm -
total dose 200k Rad(Si) V 200k Rad(Si) V 200k Rad(Si) V 200k Rad(Si) V - 200k Rad(Si) V -
width 10.415 mm 10.415 mm 10.415 mm - 10.415 mm 10.415 mm -
Base Number Matches 1 1 1 1 1 - -

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