DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
μ
PA828TD
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• Built-in low phase distortion transistor suited for OSC applications
f
T
= 9.0 GHz TYP.,
⏐S
21e
⏐
2
= 7.5 dB TYP. @ V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
NF = 1.3 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• Built-in 2 transistors (2
×
2SC5436)
• 6-pin lead-less minimold (M16, 1208 PKG)
BUILT-IN TRANSISTORS
Q1, Q2
3-pin thin-type ultra super minimold part No.
2SC5436
<R>
ORDERING INFORMATION
Part Number
Order Number
Package
6-pin lead-less minimold
(M16, 1208 PKG) (Pb-Free)
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base)
face the perforation side of the tape
μ
PA828TD
μ
PA828TD-T3
μ
PA828TD-A
μ
PA828TD-T3-A
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10402EJ03V0DS (3rd edition)
Date Published February 2008 NS
Printed in Japan
The mark <R> shows major revised points.
2003, 2008
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
μ
PA828TD
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
5.0
3.0
2
30
90 in 1 element
180 in 2 elements
Unit
V
V
V
mA
mW
Junction Temperature
Storage Temperature
T
j
T
stg
150
−65
to +150
°C
°C
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characterstics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characterstics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
h
FE
Ratio
f
T
f
T
⏐S
21e
⏐
⏐S
21e
⏐
NF
NF
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 20 mA
−
−
70
−
−
−
100
100
140
nA
nA
−
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 2 V, I
C
= 20 mA,
h
FE1
: Smaller value of Q1 and Q2,
h
FE2
: Larger value of Q1 and Q2
7.0
9.0
6.0
7.0
−
−
−
0.85
9.0
11.0
7.5
8.5
1.3
1.3
0.4
−
−
−
−
−
2.0
2.0
0.8
−
GHz
GHz
dB
dB
dB
dB
pF
−
2
h
FE1
/h
FE2
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
kL
70 to 140
2
Data Sheet PU10402EJ03V0DS
μ
PA828TD
<R>
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
0.5
f = 1 MHz
0.4
300
250
200 2 Elements in total
180
0.3
150
100
50
Per Element
0.2
90
0.1
0
25
50
75
100
125
150
0
1
2
3
4
5
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 1 V
100
10
1
0.1
0.01
0.001
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
35
500
μ
A 450
μ
A
400
μ
A
Collector Current I
C
(mA)
30
25
20
15
10
5
0
350
μ
A
300
μ
A
250
μ
A
200
μ
A
150
μ
A
100
μ
A
I
B
= 50
μ
A
1
2
3
4
Collector to Emitter Voltage V
CE
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10402EJ03V0DS
3
μ
PA828TD
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
1 000
V
CE
= 2 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain h
FE
100
DC Current Gain h
FE
1
10
100
100
10
0.1
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
Gain Bandwidth Product f
T
(GHz)
Gain Bandwidth Product f
T
(GHz)
V
CE
= 1 V
f = 2 GHz
V
CE
= 2 V
f = 2 GHz
12
12
8
8
4
4
0
1
10
Collector Current I
C
(mA)
100
0
1
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1
1
Frequency f (GHz)
10
|S
21e
|
2
MSG
MAG
V
CE
= 1 V
I
C
= 10 mA
35
30
25
20
15
10
5
0
0.1
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
V
CE
= 2 V
I
C
= 10 mA
MSG
MAG
|S
21e
|
2
1
Frequency f (GHz)
10
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PU10402EJ03V0DS
μ
PA828TD
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
MSG
MAG
20
MSG
16
|S
21e
|
2
MAG
16
|S
21e
|
2
12
12
8
8
4
V
CE
= 1 V
f = 1 GHz
0
1
10
Collector Current I
C
(mA)
100
4
V
CE
= 2 V
f = 1 GHz
0
1
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
20
16
MSG
12
|S
21e
|
2
16
MSG
12
|S
21e
|
2
8
MAG
MAG
8
4
V
CE
= 1 V
f = 2 GHz
0
1
10
Collector Current I
C
(mA)
100
4
V
CE
= 2 V
f = 2 GHz
0
1
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
| (dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
10
10
8
MAG
8
MAG
6
|S
21e
|
2
4
2
6
4
|S
21e
|
2
2
V
CE
= 1 V
f = 4 GHz
0
1
10
Collector Current I
C
(mA)
100
2
V
CE
= 2 V
f = 4 GHz
0
1
10
Collector Current I
C
(mA)
100
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10402EJ03V0DS
5
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