CTLDM7003T-M563DTR datasheet, PDF

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CTLDM7003T-M563DTR: DescriptionSmall Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 1.60 X 1.60 MM PACKAGE-6; CategoryDiscrete semiconductor The transistor; File Size636KB，2 Pages; ManufacturerCentral Semiconductor

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CTLDM7003T-M563DTR Overview

Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 1.60 X 1.60 MM PACKAGE-6

CTLDM7003T-M563DTR Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	GRID ARRAY, S-PBGA-B6
Contacts	6
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (Abs) (ID)	0.28 A
Maximum drain current (ID)	0.28 A
Maximum drain-source on-resistance	2.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	S-PBGA-B6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	GRID ARRAY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	BALL
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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CTLDM7003T-M563D

SURFACE MOUNT

DUAL, N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFETS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CTLDM7003T-

M563D is a Dual N-channel MOSFET packaged in

a space saving 1.6 x 1.6mm TLM™ surface mount

package. This device is a TLM™ equivalent of the

popular CMLDM7003T, SOT-563 device, featuring

enhanced thermal characteristics, a package footprint

compatible with standard SOT-563 mounting pad

geometries, and a height profile of only 0.4mm.

MARKING CODE: CJA

FEATURES:

• ESD protection up to 2kV

• Dual MOSFETs

• Low rDS(ON) (1.6Ω TYP @ VGS=1.8V)

• TLM563D with a package profile of 0.4mm, compatible with

SOT-563 mounting geometries

SYMBOL

VDS

VDG

VGS

IDM

TJ, Tstg

280

1.5

350

-65 to +150

357

UNITS

°C

°C/W

UNITS

μA

1.2

1.4

1.6

1.3

1.1

200

5.0

2.3

1.9

1.5

TLM563D CASE

• Device is

Halogen Free

by design

APPLICATIONS:

• Load Power Switches

• DC/DC Converters

• Battery powered devices including Cell Phones,

PDAs, Digital Cameras, MP3 Players, etc.

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Maximum Pulsed Drain Current

Power Dissipation (Note 1)

Operating and Storage Junction Temperature

Thermal Resistance (Note 1)

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

IGSSF, IGSSR

VGS=5.0V, VDS=0

IGSSF, IGSSR

IDSS

BVDSS

VGS(th)

VSD

rDS(ON)

gFS

Crss

Ciss

Coss

VGS=10V, VDS=0

VGS=12V, VDS=0

VDS=50V, VGS=0

VGS=0, ID=10μA

VDS=10V, ID=250μA

VGS=0, IS=115mA

VGS=1.8V, ID=50mA

VGS=2.5V, ID=50mA

VGS=5.0V, ID=50mA

VDS=10V, ID=200mA

VDS=25V, VGS=0, f=1.0MHz

0.75

0.5

1.0

Notes: (1) Mounted on 2 inch square FR4 PCB with copper mounting pad area of 1.8mm

R1 (17-February 2010)

CTLDM7003T-M563DTR Related Products

	CTLDM7003T-M563DTR	CTLDM7003T-M563DTRPBFREE	CTLDM7003T-M563DTRLEADFREE
Description	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 1.60 X 1.60 MM PACKAGE-6	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified?	incompatible	conform to	conform to
Reach Compliance Code	not_compliant	compliant	compliant
Maximum drain current (Abs) (ID)	0.28 A	0.28 A	0.28 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W	0.35 W	0.35 W
surface mount	YES	YES	YES
Base Number Matches	1	1	1

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