CTLDM7003T-M563DTRPBFREE datasheet, PDF

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CTLDM7003T-M563DTRPBFREE: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size636KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CTLDM7003T-M563DTRPBFREE Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

CTLDM7003T-M563DTRPBFREE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	compliant
Maximum drain current (Abs) (ID)	0.28 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W
surface mount	YES
Base Number Matches	1

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CTLDM7003T-M563D

SURFACE MOUNT

DUAL, N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFETS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CTLDM7003T-

M563D is a Dual N-channel MOSFET packaged in

a space saving 1.6 x 1.6mm TLM™ surface mount

package. This device is a TLM™ equivalent of the

popular CMLDM7003T, SOT-563 device, featuring

enhanced thermal characteristics, a package footprint

compatible with standard SOT-563 mounting pad

geometries, and a height profile of only 0.4mm.

MARKING CODE: CJA

FEATURES:

• ESD protection up to 2kV

• Dual MOSFETs

• Low rDS(ON) (1.6Ω TYP @ VGS=1.8V)

• TLM563D with a package profile of 0.4mm, compatible with

SOT-563 mounting geometries

SYMBOL

VDS

VDG

VGS

IDM

TJ, Tstg

280

1.5

350

-65 to +150

357

UNITS

°C

°C/W

UNITS

μA

1.2

1.4

1.6

1.3

1.1

200

5.0

2.3

1.9

1.5

TLM563D CASE

• Device is

Halogen Free

by design

APPLICATIONS:

• Load Power Switches

• DC/DC Converters

• Battery powered devices including Cell Phones,

PDAs, Digital Cameras, MP3 Players, etc.

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Maximum Pulsed Drain Current

Power Dissipation (Note 1)

Operating and Storage Junction Temperature

Thermal Resistance (Note 1)

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

IGSSF, IGSSR

VGS=5.0V, VDS=0

IGSSF, IGSSR

IDSS

BVDSS

VGS(th)

VSD

rDS(ON)

gFS

Crss

Ciss

Coss

VGS=10V, VDS=0

VGS=12V, VDS=0

VDS=50V, VGS=0

VGS=0, ID=10μA

VDS=10V, ID=250μA

VGS=0, IS=115mA

VGS=1.8V, ID=50mA

VGS=2.5V, ID=50mA

VGS=5.0V, ID=50mA

VDS=10V, ID=200mA

VDS=25V, VGS=0, f=1.0MHz

0.75

0.5

1.0

Notes: (1) Mounted on 2 inch square FR4 PCB with copper mounting pad area of 1.8mm

R1 (17-February 2010)

CTLDM7003T-M563DTRPBFREE Related Products

	CTLDM7003T-M563DTRPBFREE	CTLDM7003T-M563DTR	CTLDM7003T-M563DTRLEADFREE
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 1.60 X 1.60 MM PACKAGE-6	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified?	conform to	incompatible	conform to
Reach Compliance Code	compliant	not_compliant	compliant
Maximum drain current (Abs) (ID)	0.28 A	0.28 A	0.28 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W	0.35 W	0.35 W
surface mount	YES	YES	YES
Base Number Matches	1	1	1

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