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MMBZ5225B-V-G

Description
DIODE 3 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Voltage Regulator Diode
CategoryDiscrete semiconductor    diode   
File Size79KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
Download Datasheet Parametric View All

MMBZ5225B-V-G Overview

DIODE 3 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Voltage Regulator Diode

MMBZ5225B-V-G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.225 W
Certification statusNot Qualified
Nominal reference voltage3 V
surface mountYES
technologyZENER
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Maximum voltage tolerance5%
Working test current20 mA
Base Number Matches1
MMBZ5225-V-G to MMBZ5267-V-G
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon planar power Zener diodes
• Standard Zener voltage tolerance is ± 5 %
with a “B” suffix (e.g.: MMBZ5225B-V-G),
suffix “C” is ± 2 % tolerance
• High temperature soldering guaranteed:
260 °C/4 x 10 s at terminals
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
3
1
2
18078
Mechanical Data
Case:
SOT-23
Weight:
approx.
8.1
mg
Packaging codes/options:
-18/10 k per 13" reel (8 mm tape), 10 k/box
-08/3 k per 7" reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Zener current
(see table “Characteristics”)
Power dissipation
Notes
1)
2)
Test condition
Symbol
Value
Unit
P
tot
P
tot
225
1)
300
2)
mW
mW
On FR - 5 board using recommended solder pad layout
On alumina substrate
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Maximum junction temperature
Storage temperature range
Note
1)
Test condition
Symbol
R
thJA
T
j
T
stg
Value
556
1)
150
- 65 to + 175
Unit
°C/W
°C
°C
On FR - 5 board using recommended solder pad layout
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Document Number
85183
Rev. 1.1, 15-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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