74VHC00
•
74VHCT00 Quad 2-Input NAND Gate
February 1998
74VHC00
•
74VHCT00
Quad 2-Input NAND Gate
General Description
The VHC/VHCT00 is an advanced high-speed CMOS
2-Input NAND Gate fabricated with silicon gate CMOS tech-
nology. It achieves the high-speed operation similar to
equivalent Bipolar Schottky TTL while maintaining the
CMOS low power dissipation. The internal circuit is com-
posed of 3 stages, including buffer output, which provide
high noise immunity and stable output. An input protection
circuit insures that 0V to 7V can be applied to the input pins
without regard to the supply voltage. This device can be
used to interface 5V to 3V systems and two supply systems
such as battery backup. This circuit prevents device destruc-
tion due to mismatched supply and input voltages.
Features
n
High Speed:
VHC t
pd
= 3.7ns (typ) at T
A
= 25˚C
VHCT t
pd
= 5.0 ns (typ) at T
A
= 25˚C
n
High noise immunity:
VHC V
NIH
= V
NIL
= 28% V
CC
(min)
VHCT V
IH
= 2.0V, V
IL
= 0.8V
n
Power down protection:
VHC inputs only
VHCT inputs and outputs
n
Low noise: V
OLP
= 0.8V (max)
n
Low power dissipation:
I
CC
= 2 µA (max) at T
A
= 25˚C
n
Pin and function compatible with 74HC/HCT00
NOTE: ADD EXTERNAL PULL UP RESISTOR TO
VHCT OUTPUTS TO DRIVE CMOS INPUTS
Ordering Code:
Commercial
74VHC00M
74VHC00SJ
74VHC00MTC
74VHC00N
74VHCT00M
74VHCT00SJ
74VHCT00MTC
74VHCT00N
Package Number
M14A
M14D
MTC14
N14A
M14A
M14D
MTC14
N14A
Package Description
14-Lead Molded JEDEC SOIC
14-Lead Molded EIAJ SOIC
14-Lead Molded JEDEC Type 1 TSSOP
14-Lead Molded DIP
14-Lead Molded JEDEC SOIC
14-Lead Molded EIAJ SOIC
14-Lead Molded JEDEC Type 1 TSSOP
14-Lead Molded DIP
Surface mount packages are also available on Tape and Reel. Specify by appending the suffix letter
″X’
to the ordering code.
Logic Symbol
IEEE/IEC
Connection Diagram
Pin Assignment for DIP,TSSOP and SOIC
DS011504-1
DS011504-2
© 1998 Fairchild Semiconductor Corporation
DS011504
www.fairchildsemi.com
Absolute Maximum Ratings
(Note 1)
Supply Voltage (V
CC
)
DC Input Voltage (V
IN
)
DC Output Voltage (V
OUT
)
VHC
VHCT (Note 2)
Input Diode Current (I
IK
)
Output Diode Current (I
OK
)
VHC
VHCT
DC Output Current (I
OUT
)
DC V
CC
/GND Current (I
CC
)
Storage Temperature (T
STG
)
Lead Temperature (T
L
)
(Soldering, 10 seconds)
−0.5V to +7.0V
−0.5V to +7.0V
−0.5V to V
CC
+0.5V
−0.5V to 7.0V
−20 mA
Recommended Operating
Conditions
(Note 3)
Supply Voltage (V
CC
)
VHC
VHCT
Input Voltage (V
IN
)
Output Voltage (V
OUT
)
Operating Temperature (T
OPR
)
Input Rise and Fall Time (t
r
, t
f
)
V
CC
= 3.3V
±
0.3V (VHC Only)
V
CC
= 5.0V
±
0.5V
2.0V to +5.5V
4.5V to 5.5V
0V to +5.5V
0V to V
CC
−40˚C to +85˚C
0 ns/V
z
100 ns/V
0 ns/V
z
20 ns/V
±
20 mA
−20 mA
±
25 mA
±
50 mA
−65˚C to +150˚C
260˚C
Note 1:
Absolute Maximum Ratings are values beyond which the device
may be damaged or have its useful life impaired. The databook specifications
should be met, without exception, to ensure that the system design is reliable
over its power supply, temperature, and output/input loading variables. Fair-
child does not recommend operation outside databook specifications.
Note 2:
V
OUT
>
V
CC
only if output is in H state.
Note 3:
Unused inputs must be held HIGH or LOW. They may not float.
DC Electrical Characteristics for VHC
Symbol
Parameter
V
CC
(V)
Min
V
IH
V
IL
V
OH
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
2.0
3.0–5.5
2.0
3.0–5.5
2.0
3.0
4.5
3.0
4.5
V
OL
Low Level Output
Voltage
2.0
3.0
4.5
3.0
4.5
I
IN
I
CC
Input Leakage
Current
Quiescent Supply
Current
0–5.5
5.5
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
0.36
0.36
2.0
3.0
4.5
1.50
0.7 V
CC
0.50
0.3 V
CC
1.9
2.9
4.4
2.48
3.80
0.1
0.1
0.1
0.44
0.44
V
I
OL
= 4 mA
I
OL
= 8 mA
V
IN
= 5.5V or GND
V
V
V
IN
= V
IH
or V
IL
I
OH
= −4mA
I
OH
= −8mA
I
OL
= 50 µA
V
Typ
Max
Min
1.50
0.7 V
CC
0.50
0.3 V
CC
T
A
= 25˚C
T
A
= −40˚C
to +85˚C
Max
V
V
V
IN
= V
IH
or V
IL
I
OH
= −50 µA
Units
Conditions
±
0.1
2.0
±
1.0
20.0
µA
V
IN
= V
CC
or GND
µA
3
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Noise Characteristics for VHC
Symbol
V
OLP
(Note 4)
V
OLV
(Note 4)
V
IHD
(Note 4)
V
ILD
(Note 4)
Parameter
Quiet Output Maximum
Dynamic V
OL
Quiet Output Minimum
Dynamic V
OL
Minimum High Level
Dynamic Input Voltage
Maximum Low Level
Dynamic Input Voltage
5.0
1.5
V
C
L
= 50 pF
5.0
3.5
V
C
L
= 50 pF
5.0
−0.3
−0.8
V
C
L
= 50 pF
V
CC
(V)
5.0
T
A
= 25˚C
Typ
0.3
Limit
0.8
V
C
L
= 50 pF
Units
Conditions
Note 4:
Parameter guaranteed by design
AC Electrical Characteristics for VHC
Symbol
Parameter
V
CC
(V)
Min
t
PLH
,
t
PHL
Propagation
Delay
5.0
±
0.5
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance
Note 5:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average oper-
ating current can be obtained from the equation: I
CC
(opr.) = C
PD
*
V
CC
*
f
IN
+ I
CC
/4 (per gate).
T
A
= 25˚C
Typ
5.5
8.0
3.7
5.2
4
19
Max
7.9
11.4
5.5
7.5
10
T
A
= −40˚C
to +85˚C
Min
1.0
1.0
1.0
1.0
Max
9.5
13.0
6.5
8.5
10
Units
Conditions
3.3
±
0.3
ns
ns
pF
pF
C
L
= 15 pF
C
L
= 50 pF
C
L
= 15 pF
C
L
= 50 pF
V
CC
= Open
(Note 5)
DC Electrical Characteristics for VHCT
Symbol
Parameter
V
CC
(V)
Min
V
IH
V
IL
V
OH
V
OL
I
IN
I
CC
I
CCT
I
OFF
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Quiescent Supply Current
Maximum I
CC
/ Input
Output Leakage Current
(Power Down State)
4.5
5.5
4.5
5.5
4.5
4.5
4.5
4.5
0–5.5
5.5
5.5
3.15
2.5
0.0
0.1
0.36
3.65
2.0
2.0
0.8
0.8
3.15
2.4
0.1
0.44
Typ
Max
T
A
= 25˚C
T
A
= −40˚C
to +85˚C
Min
2.0
2.0
0.8
0.8
Max
V
V
V
V
V
V
µA
µA
mA
V
IN
= V
IH
V
IN
= V
IH
I
OH
= −50 µA
I
OH
= −8 mA
I
OL
= 50 µA
I
OL
= 8 mA
V
IN
= 5.5V or GND
V
IN
= V
CC
or GND
V
IN
= 3.4V
Other Inputs = V
CC
or GND
V
OUT
= 5.5V
0.0
0.5
5.0
µA
Units
Conditions
±
0.1
2.0
1.35
±
1.0
20.0
1.50
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4
Noise Characteristics for VHCT
Symbol
V
OLP
(Note 6)
V
OLV
(Note 6)
V
IHD
(Note 6)
V
ILD
(Note 6)
Parameter
Quiet Output Maximum
Dynamic V
OL
Quiet Output Minimum
Dynamic V
OL
Minimum High Level
Dynamic Input Voltage
Maximum Low Level
Dynamic Input Voltage
V
CC
(V)
5.0
5.0
5.0
5.0
T
A
= 25˚C
Typ
0.4
−0.4
Limit
0.8
−0.8
2.0
0.8
V
V
V
V
C
L
= 50 pF
C
L
= 50 pF
C
L
= 50 pF
C
L
= 50 pF
Units
Conditions
Note 6:
Parameter guaranteed by design.
AC Electrical Characteristics for VHCT
Symbol
Parameter
V
CC
(V)
Min
t
PLH
t
PHL
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance
Note 7:
C
PD
is defined as the value of the internal equivalent capacitance, which is calculated from the operating current consumption without load. Average oper-
ating current can be obtained from the equation: I
CC
(opr.) = C
PD
*
V
CC
*
f
IN
+ I
CC
/4 (per gate)
T
A
= 25˚C
Typ
5.0
5.5
4
17
Max
6.9
7.9
10
T
A
= −40˚C
to +85˚C
Min
1.0
1.0
Max
8.0
9.0
10
Units
Conditions
Fig.
No.
Propagation Delay
5.0
ns
pF
pF
C
L
= 15 pF
C
L
= 50 pF
V
CC
= Open
(Note 7)
±
0.5
5
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