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2SJ417

Description
Power Field-Effect Transistor, 4A I(D), 30V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size90KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SJ417 Overview

Power Field-Effect Transistor, 4A I(D), 30V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN

2SJ417 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1445017246
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)4 A
Maximum drain current (ID)4 A
Maximum drain-source on-resistance0.29 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON

2SJ417 Related Products

2SJ417 2SJ419
Description Power Field-Effect Transistor, 4A I(D), 30V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN Power Field-Effect Transistor, 4A I(D), 12V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Is it Rohs certified? incompatible incompatible
Objectid 1445017246 1449020049
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PDSO-G8
Contacts 3 8
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 12 V
Maximum drain current (ID) 4 A 4 A
Maximum drain-source on-resistance 0.29 Ω 0.082 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PDSO-G8
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 8
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 20 W 2 W
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE DUAL
Transistor component materials SILICON SILICON

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