Power Field-Effect Transistor, 4A I(D), 12V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 1449020049 |
| Parts packaging code | SOT |
| package instruction | SMALL OUTLINE, R-PDSO-G8 |
| Contacts | 8 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| YTEOL | 0 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 12 V |
| Maximum drain current (ID) | 4 A |
| Maximum drain-source on-resistance | 0.082 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G8 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 8 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | P-CHANNEL |
| Maximum power dissipation(Abs) | 2 W |
| Maximum pulsed drain current (IDM) | 32 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| 2SJ419 | 2SJ417 | |
|---|---|---|
| Description | Power Field-Effect Transistor, 4A I(D), 12V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Power Field-Effect Transistor, 4A I(D), 30V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible |
| Objectid | 1449020049 | 1445017246 |
| package instruction | SMALL OUTLINE, R-PDSO-G8 | IN-LINE, R-PSIP-T3 |
| Contacts | 8 | 3 |
| Reach Compliance Code | unknown | unknown |
| ECCN code | EAR99 | EAR99 |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE |
| Minimum drain-source breakdown voltage | 12 V | 30 V |
| Maximum drain current (ID) | 4 A | 4 A |
| Maximum drain-source on-resistance | 0.082 Ω | 0.29 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G8 | R-PSIP-T3 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 8 | 3 |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | IN-LINE |
| Polarity/channel type | P-CHANNEL | P-CHANNEL |
| Maximum power dissipation(Abs) | 2 W | 20 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | NO |
| Terminal surface | TIN LEAD | TIN LEAD |
| Terminal form | GULL WING | THROUGH-HOLE |
| Terminal location | DUAL | SINGLE |
| Transistor component materials | SILICON | SILICON |
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