KTA1535T-RTK/PW datasheet, PDF

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KTA1535T-RTK/PW: DescriptionSmall Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, ULTRASMALL, TSM, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size881KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/; Environmental Compliance

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KTA1535T-RTK/PW Overview

Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, ULTRASMALL, TSM, 3 PIN

KTA1535T-RTK/PW Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	160 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

RELAY DRIVERS, LAMP DRIVERS,

MOTOR DRIVERS AND STROBES APPLICATION.

FEATURES

・Adoption

of MBIT Processes.

・High

Current Capacitance.

・Low

Collector-to-Emitter Saturation Voltage.

・High

Speed Switching.

・Ultrasmall-Sized

Package permitting applied sets to be

made small and slim.

・High

Allowable Power Dissipation.

・Complementary

to KTC3535T

KTA1535T

EPITAXIAL PLANAR PNP TRANSISTOR

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

DC

Collector Current

Pulse

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

*

T

j

T

stg

RATING

-20

-5

-3

A

-5

600

0.9

150

-55½150

mA

W

℃

UNIT

V

* Package mounted on a ceramic board (600㎟×0.8㎜)

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

Transition Frequency

Collector Output Capacitance

Turn-On Time

SYMBOL

I

CBO

I

EBO

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

C

ob

t

on

TEST CONDITION

V

CB

=-12V, I

E

=0

V

EB

=-4V, I

C

=0

I

C

=-10μ I

E

=0

A,

I

C

=-1mA, I

B

=0

I

E

=-10μ I

C

=0

A,

I

C

=-1.5A, I

B

=-30mA

I

C

=-1.5A, I

B

=-30mA

V

CE

=-2V, I

C

=-500mA

V

CE

=-2V, I

C

=-500mA

V

CB

=-10V, f=1MHz

MIN.

-

-20

-5

-

200

-

TYP.

-

-130

-0.85

-

160

45

30

MAX.

-0.1

-

-165

-1.2

560

-

MHz

pF

UNIT

μ

A

μ

A

V

mV

V

Switching

Time

Storage Time

t

stg

-

90

-

nS

Fall Time

t

f

-

10

-

2011. 5. 25

Revision No : 1

1/3

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