Silicon Junction FETs (Small Signal)
2SK1104
Silicon N-Channel Junction FET
For switching
Complementary to 2SJ164
s
Features
q
Low ON-resistance
q
Low-noise characteristics
unit: mm
4.0±0.2
3.0±0.2
0.7±0.1
s
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
−65
20
10
300
150
−55
to +150
Unit
V
mA
mA
mW
°C
°C
1.27 1.27
1
2
3
2.0±0.2
marking
1: Source
2: Gate
2.54±0.15
3: Drain
EIAJ: SC-72
New S Type Package
s
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Symbol
I
DSS*
I
GSS
V
GDS
V
GSC
| Y
fs
|
R
DS(on)
C
oss
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
−30V,
V
DS
= 0
I
G
=
−10µA,
V
DS
= 0
V
DS
= 10V, I
D
= 10µA
V
DS
= 10V, I
D
= 1mA, f = 1kHz
V
DS
= 10mV, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
1.8
−65
−1.5
2.5
250
7
1.3
1.5
−3.5
min
0.2
typ
max
6
−10
Unit
mA
nA
V
V
mS
Ω
pF
pF
pF
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
*
I
DSS
rank classification
Runk
I
DSS
(mA)
O
0.2 to 1
P
0.6 to 1.5
Q
1 to 3
R
2.5 to 6
+0.2
0.45–0.1
15.6±0.5
1
Silicon Junction FETs (Small Signal)
P
D
Ta
400
2.5
Ta=25˚C
350
2.0
2.0
V
GS
=0V
1.5
– 0.1V
– 0.2V
1.0
– 0.3V
– 0.4V
0.5
50
0
0
20
40
60
80 100 120 140 160
0
0
1
2
3
4
5
6
0
–1.2
2SK1104
I
D
V
DS
2.5
I
D
V
GS
Allowable power dissipation P
D
(mW)
Drain current I
D
(mA)
Drain current I
D
(mA)
300
250
200
150
100
Ta=–25˚C
1.5
25˚C
1.0
75˚C
0.5
–1.0 – 0.8 – 0.6 – 0.4 – 0.2
0
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
| Y
fs
|
V
GS
5
2.5
V
DS
=10V
Ta=25˚C
4
| Y
fs
|
I
D
Forward transfer admittance |Y
fs
| (mS)
V
DS
=10V
Ta=25˚C
C
iss
, C
oss
, C
rss
V
DS
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
10
V
GS
=0
f=1MHz
Ta=25˚C
8
Forward transfer admittance |Y
fs
| (mS)
2.0
I
DSS
=10mA
1.5
3
I
DSS
=10mA
2
6
C
iss
1.0
4
1
0.5
2
C
oss
C
rss
0
–1.6
0
–1.2
– 0.8
– 0.4
0
0
1
2
3
4
5
6
7
8
0
1
3
10
30
100
Gate to source voltage V
GS
(V)
Drain current I
D
(mA)
Drain to source voltage V
DS
(V)
2
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