2SK1153, 2SK1154
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-220AB
D
G
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
S
2SK1153, 2SK1154
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK1153
2SK1154
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25°C
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Symbol
V
DSS
Ratings
450
500
±30
3
12
3
30
150
–55 to +150
V
A
A
A
W
°C
°C
Unit
V
2
2SK1153, 2SK1154
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
Symbol Min
2SK1153 V
(BR)DSS
2SK1154
V
(BR)GSS
I
GSS
450
500
±30
—
—
—
—
—
—
±10
250
V
µA
µA
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
V
GS(off)
2.0
—
—
|yfs|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
1.5
—
—
—
—
—
—
—
—
—
—
2.0
2.2
2.5
330
90
15
7
20
30
20
0.9
300
3.0
2.8
3.0
—
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 3 A, V
GS
= 0
I
F
= 3 A, V
GS
= 0,
di
F
/dt = 100 A/µs
I
D
= 2 A, V
GS
= 10 V,
R
L
= 15
Ω
I
D
= 2 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
Ω
I
D
= 1 mA, V
DS
= 10 V
I
D
= 2 A, V
GS
= 10 V *
1
Typ
—
Max
—
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
2SK1153 I
DSS
2SK1154
Gate to source cutoff voltage
Static Drain to source 2SK1153 R
DS(on)
on stateresistance
2SK1154
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
3
2SK1153, 2SK1154
Power vs. Temperature Derating
60
Channel Dissipation Pch (W)
50
20
Drain Current I
D
(A)
10
5
2
0.1
0.5
0.2
0.01
0.05
0
50
100
Case Temperature T
C
(°C)
150
1
is
10
th
0
in ted
µ
s
onlimi
)
D
i
1
at is
(on
C
r
m
O
pe ea
DS
s
pe
O ar R
y
ra
b
tio
n
(T
C
=
25
°
C
)
Ta = 25°C
2SK1154
2SK1153
10
µ
s
Maximum Safe Operation Area
40
PW
=
10
s
m
(1
20
3
30
10
100 300 1,000
Drain to Source Voltage V
DS
(V)
)
ot
sh
Typical Output Characteristics
5
Pulse Test
4
Drain Current I
D
(A)
10 V
8V
Drain Current I
D
(A)
6V
5.5 V
5V
4
5
Typical Transfer Characteristics
–25°C
V
DS
= 10 V
Pulse Test
T
C
= 25°C
3
75°C
2
3
2
4.5 V
1
V
GS
= 4 V
1
0
4
8
12
16
Drain to Source Voltage V
DS
(V)
20
0
2
4
6
8
Gate to Source Voltage V
GS
(V)
10
4
2SK1153, 2SK1154
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
20
Drain to Source Saturation Voltage
V
DS (on)
(V)
Pulse Test
50
Pulse Test
V
GS
= 10 V
Static Drain to Source on State
Resistance vs. Drain Current
16
20
10
5
12
8
4
3A
2A
I
D
= 1 A
2
1.0
0.5
0.1
15 V
0
4
8
12
16
Gate to Source Voltage V
GS
(V)
20
0.2
0.5 1.0
2
Drain Current I
D
(A)
5
10
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
yfs
(S)
5
V
GS
= 10 V
Pulse Test
3A
3
2A
I
D
= 1 A
5
Forward Transfer Admittance
vs. Drain Current
V
DS
= 10 V
Pulse Test
–25°C
T
C
= 25°C
4
2
1.0
75°C
0.5
2
0.2
0.1
1
0
–40
0
40
80
120
Case Temperature T
C
(°C)
160
0.05
0.1
0.2
2
0.5 1.0
Drain Current I
D
(A)
5
5
Mobile and portable
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