KM68FV1000G-8H datasheet, PDF - EEWORLD Datasheet

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KM68FV1000G-8H: DescriptionStandard SRAM, 128KX8, 85ns, CMOS, PDSO32; Categorystorage storage; File Size585KB，11 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM68FV1000G-8H Overview

Standard SRAM, 128KX8, 85ns, CMOS, PDSO32

KM68FV1000G-8H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SOP, SOP32,.56
Reach Compliance Code	compliant
Maximum access time	85 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP32,.56
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3 V
Certification status	Not Qualified
Maximum standby current	0.000005 A
Minimum standby current	1 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Base Number Matches	1

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KM68FV1000G-8H Related Products

	KM68FV1000G-8H	KM68FS1000RI-12H	KM68FV1000G-7H	KM68FV1000TI-7H
Description	Standard SRAM, 128KX8, 85ns, CMOS, PDSO32	Standard SRAM, 128KX8, 120ns, CMOS, PDSO32	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	SOP, SOP32,.56	TSSOP, TSSOP32,.8,20	SOP, SOP32,.56	TSSOP, TSSOP32,.8,20
Reach Compliance Code	compliant	compliant	compliant	compliant
Maximum access time	85 ns	120 ns	70 ns	70 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
JESD-609 code	e0	e0	e0	e0
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8
Humidity sensitivity level	3	3	3	3
Number of terminals	32	32	32	32
word count	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	85 °C	70 °C	85 °C
organize	128KX8	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOP	TSSOP	SOP	TSSOP
Encapsulate equivalent code	SOP32,.56	TSSOP32,.8,20	SOP32,.56	TSSOP32,.8,20
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260
power supply	3 V	2.3/3.3 V	3 V	3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.000005 A	0.000005 A	0.000005 A	0.000005 A
Minimum standby current	1 V	1 V	1 V	1 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	1.27 mm	0.5 mm	1.27 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40
Nominal supply voltage (Vsup)	3 V	-	3 V	3 V
Base Number Matches	1	1	1	-
Maximum slew rate	-	0.03 mA	0.055 mA	0.055 mA

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