SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
A
KTB1124
EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES
・Adoption
of MBIT processes.
・Low
collector-to-emitter saturation voltage.
・Fast
switching speed.
・Large
current capacity and wide ASO.
・Complementary
to KTD1624.
・Suffix
U
: Qualified to AEC-Q101.
ex) KTB1124-B-RTF/HU
D
C
G
H
J
B
E
D
K
F
F
℃
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
*
T
j
T
stg
RATING
-60
-50
-6
-3
-6
-600
500
1
150
-55½150
UNIT
V
V
V
A
A
mA
mW
W
℃
1
2
3
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
_
2.50 + 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
1.50 + 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
h
FE
Rank
Lot No.
* : Package mounted on ceramic substrate(250mm
2
×0.8t)
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
h
FE
(2)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching
Time
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
SYMBOL
I
CBO
I
EBO
h
FE
(1) (Note)
TEST CONDITION
V
CB
=-40V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-2V, I
C
=-100㎃
V
CE
=-2V, I
C
=-3A
I
C
=-2A, I
B
=-100㎃
I
C
=-2A, I
B
=-100㎃
V
CE
=-10V, I
C
=-50㎃
V
CB
=-10V, f=1㎒
PW=20μs
DC
<
1%
=
INPUT
VR
I B1
R8
IB2
25
MIN.
-
-
100
35
-
-
-
-
-
X
TYP.
-
-
-
-
-0.35
-0.94
150
39
70
MAX.
-1
-1
400
-
-0.7
-1.2
-
-
-
V
V
㎒
㎊
℃
Type Name
UNIT.
㎂
㎂
Storage Time
t
stg
50
100Ω
470Ω
-25V
-
450
-
nS
Fall Time
t
f
5V
-10I
B
1=10I
B2
=I
C
=1A
-
35
-
Note : h
FE
(1) Classification A:100½200, B:140½280, C:200½400
2018. 04. 10
Revision No : 5
1/3
KTB1124
I
C
- V
CE
COLLECOTR CURRENT IC (A)
-200mA
-100mA
-50mA
-20mA
-10mA
-5mA
I
B
=0
I
C
- V
BE
COLLECTOR CURRENT I
C
(A)
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Ta=7
5 C
25 C
-25
C
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
V
CE
=-2V
0
-0.4
-0.8
-1.2
-1.6
-2.0
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
BASE EMITTER VOLTAGE V
BE
(V)
I
C
- V
CE
COLLECTOR CURRENT I
C
(A)
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
-2
-4
-6
-8 -10
I
B
=0
-2mA
-14mA
-12mA
-10mA
-8mA
-6mA
-4mA
h
FE
- I
C
1k
V
CE
=-2V
Ta=75 C
Ta=25 C
Ta=-25 C
DC CURRENT GAIN h
FE
500
300
100
50
30
-12 -14 -16 -18 -20
10
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
V
CE(sat)
- I
C
COLLECTOR EMITTER SATURATION
VOLTAGE V
CE(sat)
(mV)
I
C
/I
B
=20
V
BE(sat)
- I
C
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
-10
-5
-3
Ta=-25 C
Ta=75 C
Ta=25 C
I
C
/I
B
=20
-1K
-500
-300
-100
-50
-30
Ta=-25 C
Ta=25 C
-1
-0.5
-0.3
Ta=75 C
-10
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
-0.1
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
2018. 04. 10
Revision No : 5
2/3
KTB1124
f
T
- I
C
GAIN-BANDWIDTH PRODUCT f
T
(MHz)
OUTPUT CAPACITANCE C
ob
(pF)
1k
500
300
V
CE
=10V
C
ob
- V
CB
100
50
30
f=1MHz
100
50
30
10
5
3
10
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
1
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I
C
(A)
COLLECTOR BASE VOLTAGE V
CB
(V)
COLLECTOR POWER DISSIPATION P
C
(W)
P
C
- Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
2
1
1
MOUNTED ON CERAMIC
SAFE OPERATING AREA
-10
I
CP
10
COLLECTOR CURRENT I
C
(A)
SUBSTRATE
(250mm
2
x0.8t)
2
Ta=25 C
-5
-3
-1
-0.5
-0.3
-0.1
-0.05
-0.03
s
1m s
m
10
s
I
C
MAX.
D
C
O
0m
pe
ra
tio
n
AMBIENT TEMPERATURE Ta ( C)
-0.02
-0.1
MOUNTED ON CERAMIC
BOARD (250mm
2
x0.8t)
Ta=25 C ONE PULSE
-0.3
-1
-3
-10
-30
-100
COLLECTOR EMITTER VOLTAGE V
CE
(V)
2018. 04. 10
Revision No : 5
3/3
DSP and ARM Processors
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