IRFPS59N60CPBF datasheet, PDF - EEWORLD Datasheet

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IRFPS59N60CPBF: DescriptionPower Field-Effect Transistor, 59A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size53KB，3 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRFPS59N60CPBF Overview

Power Field-Effect Transistor, 59A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN

IRFPS59N60CPBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	59 A
Maximum drain-source on-resistance	0.045 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	240 A
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 90380

PROVISIONAL

SMPS MOSFET

Applications

l

Switch Mode Power Supply (SMPS)

l

Uninterruptible Power Supply

l

High Speed Power Switching

Benefits

l

Low Gate Charge Qg Reduces Drive

Required

l

Improved Gate Resistance for Faster

Switching

l

Fully Characterized Capacitance and

Avalanche Voltage and Current

l

Lowest Conduction Loss in Package

Outline

l

Effective C

OSS

specified (See AN 1001)

Absolute Maximum Ratings

Parameter

I

D

@ T

C

= 25°C

I

D

@ T

C

= 100°C

I

DM

P

D

@T

C

= 25°C

V

GS

dv/dt

T

J

T

STG

Continuous Drain Current, V

GS

@ 10V

Continuous Drain Current, V

GS

@ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Recommended clip force

IRFPS59N60C

HEXFET

®

Power MOSFET

V

DSS

600V

R

DS(on)

max

0.045Ω

I

D

59A

Super-247™

Max.

59

37

240

390

3.1

± 20

TBD

-40 to + 150

-55 to + 150

300 (1.6mm from case )

20

Units

A

W

W/°C

V

V/ns

N

Applicable Off Line SMPS Topologies:

l

Power Factor Correction Boost

Full Bridge

www.irf.com

1

11/2/99

IRFPS59N60CPBF Related Products

	IRFPS59N60CPBF	IRFPS59N60C
Description	Power Field-Effect Transistor, 59A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN	Power Field-Effect Transistor, 59A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN
Is it Rohs certified?	conform to	conform to
package instruction	IN-LINE, R-PSIP-T3	SUPER-247, 3 PIN
Reach Compliance Code	compliant	compliant
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V
Maximum drain current (ID)	59 A	59 A
Maximum drain-source on-resistance	0.045 Ω	0.045 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSIP-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	240 A	240 A
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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