IRFPS59N60C datasheet, PDF - EEWORLD Datasheet

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IRFPS59N60C: DescriptionPower Field-Effect Transistor, 59A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size53KB，3 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRFPS59N60C Overview

Power Field-Effect Transistor, 59A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN

IRFPS59N60C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SUPER-247, 3 PIN
Reach Compliance Code	compliant
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	59 A
Maximum drain-source on-resistance	0.045 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	240 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 90380

PROVISIONAL

SMPS MOSFET

Applications

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply

High Speed Power Switching

Benefits

Low Gate Charge Qg Reduces Drive

Required

Improved Gate Resistance for Faster

Switching

Fully Characterized Capacitance and

Avalanche Voltage and Current

Lowest Conduction Loss in Package

Outline

Effective C

OSS

specified (See AN 1001)

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

dv/dt

STG

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Recommended clip force

IRFPS59N60C

HEXFET

Power MOSFET

DSS

600V

DS(on)

max

0.045Ω

59A

Super-247™

Max.

240

390

3.1

± 20

TBD

-40 to + 150

-55 to + 150

300 (1.6mm from case )

Units

W/°C

V/ns

Applicable Off Line SMPS Topologies:

Power Factor Correction Boost

Full Bridge

www.irf.com

11/2/99

IRFPS59N60C Related Products

	IRFPS59N60C	IRFPS59N60CPBF
Description	Power Field-Effect Transistor, 59A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN	Power Field-Effect Transistor, 59A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN
Is it Rohs certified?	conform to	conform to
package instruction	SUPER-247, 3 PIN	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant	compliant
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V
Maximum drain current (ID)	59 A	59 A
Maximum drain-source on-resistance	0.045 Ω	0.045 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSIP-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	240 A	240 A
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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