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2SK1909

Description
Power Field-Effect Transistor, 25A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size91KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SK1909 Overview

Power Field-Effect Transistor, 25A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN

2SK1909 Parametric

Parameter NameAttribute value
Objectid1445017495
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)25 A
Maximum drain current (ID)25 A
Maximum drain-source on-resistance0.11 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment70 W
Maximum power dissipation(Abs)1.65 W
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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